SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

Abstract

In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device structure. The robust SiO2 layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications.

Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device

“…The constant LRS with the increasing device area reveals the localized filamentary conduction, whereas the decrease in HRS with increasing device area may be featured to the current flow through the whole area of the device. , The dependence of switching ratios with different CC signifies the characteristics of multilevel storage application. The multilevel cell (MLC) operation can be achieved by either varying the current compliance or RESET voltage. , It is worth notifying that the RESET biased controlled MLC operation could only be done if the memory exhibits a gradual decrease in current with the programmed RESET voltage. Because in the MS mode, the device shows a sudden drop in current for the RESET, as shown in Figure c, the MLC could only be attained by regulating the CC .…”

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiNx‐Based Memristor

“…NN and NO bonds are observed for Si 3 N 4 and SiO x at 6 s and the NO bond is dominant at 12 s. The SiO 2 layer acts as a tunnel barrier to enhance low‐power and uniform resistive switching and minimize current overshoot. [ 27–29 ]…”

“…N─N and N─O bonds are observed for Si 3 N 4 and SiO x at 6 s and the N─O bond is dominant at 12 s. The SiO 2 layer acts as a tunnel barrier to enhance low-power and uniform resistive switching and minimize current overshoot. [27][28][29] Figure 2a shows typical nonvolatile I-V curves in the Ni/SiN x / SiO 2 /Si device. Gradual set and reset processes are observed without CC after the forming process.…”

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

“…On the other hand, homogeneous switching is usually performed by charge trapping and detrapping, in which gradual switching is a highly desirable property in the synapse device in neuromorphic engineering [29]. High-k dielectrics, such as HfO 2 and Al 2 O 3 deposited by atomic layer deposition (ALD), have the advantage of accurate controllability of the thickness with good uniformity for RRAM applications [30][31][32][33][34]. Several studies of Al 2 O 3 dielectric film have been performed for resistive switching and synaptic properties [33][34][35].…”

“…High-k dielectrics, such as HfO 2 and Al 2 O 3 deposited by atomic layer deposition (ALD), have the advantage of accurate controllability of the thickness with good uniformity for RRAM applications [30][31][32][33][34]. Several studies of Al 2 O 3 dielectric film have been performed for resistive switching and synaptic properties [33][34][35]. However, studies on the homogeneous switching properties for neuromorphic computers in Al 2 O 3 -based RRAM devices have been few.…”