SiO 2 -sheathed InS nanowires and SiO2 nanotubes

Abstract

InS nanowires uniformly sheathed with amorphous SiO2 were synthesized via a physical vapor deposition process. InS nanowires were 20–100 nm in diameter, and the SiO2 sheaths were 5–20 nm in thickness. Single-crystalline InS cores displayed orthorhombic structure and their longitudinal directions were preferentially aligned in the [100] orientation. Pure SiO2 nanotubes of typically round cross sections were also obtained by removing InS cores from the prepared nanocables via thermal evaporation. Photoluminescence measurements on these SiO2 nanotubes demonstrated strong visible-light emission peaked at 570 nm.

Synthesis and Cathodoluminescence of Morphology-Tunable SiO2 Nanotubes and ZnS/SiO2 Core−Shell Structures Using CdSe Nanocrystals as the Seeds

“…16,25,26 Furthermore, silica nanotubes have the characteristic of their room-temperature light-emission properties in the visible range and can be used for hosting materials in bioanalysis and bioseparation and potential materials in optoelectronic nanodevices. [27][28][29][30][31][32][33][34][35][36] With these unique properties and potential applications, it is desirable to develop a method for synthesizing uniformly sized and morphology-controlled silica nanotubes in bulk quantities. 37 Up to now, researchers have been extensively studying efficient synthetic routes to prepare silica nanotubes with controlled size and shape.…”

Large‐Scale Synthesis of Flexible Gold/Cross‐Linked‐PVA Sub‐Microcables and Cross‐Linked‐PVA Tubes/Fibers by Using Templating Approaches Based on Silver/Cross‐Linked‐PVA Sub‐Microcables

“…Bando and co-workers employed a chemical vapor deposition route to synthesize perfect SiC-SiO 2 -C coaxial nanocables [17] and SiO 2 -sheathed InS nanowires. [18] Hybrid nanostructures of SiO/SiO 2 have also been prepared by carbothermal reduction of silica xerogel with carbon nanoparticles. [19] Generally, these routes usually rely on rigorous conditions, for example, high energy input as well as an inert atmosphere.…”

Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

“…3,4 In particular, passivation of nanowires is required in fabrication of field effect transistors and sensor devices based on nanowires. Various techniques have been reported to be used to form passivation layers on the 1D nanowire cores.…”