Sintering and microwave dielectric characteristics of MCAS glass-added 0.84Al2O3–0.16TiO2 ceramics

Yang, Cheng‐Fu; Chen, Ying–Chung; Tzou, Wen-Cheng; Chang, Sang-Li

doi:10.1016/s0167-577x(02)01402-7

Cited by 24 publications

(9 citation statements)

References 10 publications

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“…The intensity of TiO 2 phase peaks is weakened and the intensity of Ti 4 Cu 2 O phase peaks is enhanced with the increase of CuO content. In the study of the Al 2 O 3 -TiO 2 ceramics doped with MgO-CaO-SiO 2 -Al 2 O 3 glass, Tzou et al found that Al 2 TiO 5 phase which caused a bigger decrease in Qf was formed as the second phase [7]. However, in our studies, it is interesting to note that the Al 2 TiO 5 phase is not observed for all of the prepared samples.…”

Section: Methodscontrasting

confidence: 47%

“…Tzou et al reported that Al 2 O 3 -TiO 2 ceramics containing MgO-CaO-SiO 2 -Al 2 O 3 glass addition could be sintered at 1,250∼1,350°C and achieved t f ∼0 ppm/°C by adjusting the sintering temperature and TiO 2 content. However, the Qf value of Al 2 O 3 ceramics decreased to 9,578 GHz because of the formation of Al 2 TiO 5 phase and glass phase [7]. Ohishi et al found that the Al 2 TiO 5 phase disappeared by annealing treatment and a near-zero t f with excellent microwave dielectric properties was obtained in 0.9 Al 2 O 3 -0.1 TiO 2 ceramics sintered 1,350°C for 2 h [8].…”

Section: Introductionmentioning

confidence: 99%

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Sintering and dielectric properties of Al2O3 ceramics doped by TiO2 and CuO

et al. 2007

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The effects of CuO and TiO 2 additives on the microstructure and microwave dielectric properties of Al 2 O 3 ceramics were investigated. Al 2 O 3 ceramics with CuO and TiO 2 additions can be well sintered to achieve 93∼98% theoretical densities below 1,360°C due to Ti 4 Cu 2 O liquid phase sintering effect. The Qf values decreased with increasing CuO and TiO 2 content, due to the formation of the second phase Ti 4 Cu 2 O. However, the varying behaviors of the dielectric constant (ɛ r ) and temperature coefficients (t f ) were associated with phase constitutions, as a result of the change of CuO and TiO 2 content. The t f can be shifted close to 0 ppm/°C by controlling the content of CuO and TiO 2 . The specimens with 0.5 wt.% CuO and 7 wt.% TiO 2 sintered at 1,360°C for 4 h showed ɛ r of 11.8, Qf value of 30,000 GHz, and t f of −7 ppm/°C.

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Section: Methodscontrasting

confidence: 47%

Section: Introductionmentioning

confidence: 99%

Sintering and dielectric properties of Al2O3 ceramics doped by TiO2 and CuO

et al. 2007

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“…However, the high melting point of Al 2 O 3 necessitates a high sintering temperature of around 1700 8C [8,9]. In order to lower the sintering temperature of Al 2 O 3 ceramic, nanoparticles and sintering aids such as TiO 2 , MnO, ZnO-B 2 O 3 -SiO 2 (ZBS) glass and MgO-CaO-Al 2 O 3 -SiO 2 (MCAS) glass have been used [4,[10][11][12][13][14]. With TiO 2 addition, alumina ceramics possesses a quality factor of 333,000 GHz sintered at 1500 8C [10].…”

Section: Introductionmentioning

confidence: 99%

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

Chen

Wang

Feng

et al. 2011

Ceramics International

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“…However, despite its excellent microwave dielectric properties, the disadvantage of the MZrT material is that it requires a high sintering temperature (1420 • C). There are three approaches to reducing the sintering temperature of microwave dielectric ceramics: low melting glass addition [4][5][6], chemical processing [7], and the use of smaller particles as the starting materials [8]. Of these three, glass addition is the most effective and least expensive.…”

Section: Introductionmentioning

confidence: 99%