Sink strengths for thin film surfaces and grain boundaries

Bullough, R.; Hayns, M.R.; Wood, M. H.

doi:10.1016/0022-3115(80)90244-5

Cited by 132 publications

(42 citation statements)

References 10 publications

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“…Early analytical studies of the effect of buried interfaces on radiation-induced defect concentrations only considered one defect type-usually vacanciesand modeled recombination using an effective sink term with coefficient K sv [27]. This approach is simpler than ours, since instead of the nonlinear, coupled system in Eqn.…”

Section: Discussionmentioning

confidence: 99%

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

et al. 2011

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Section: Discussionmentioning

confidence: 99%

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

et al. 2011

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“…This leads to a generation rate of the order of 5×10 −27 J corresponding with a maximum V and I generation rate of about 5 × 10 −6 s −1 . Assuming steady state, the equations simplify considerably and can in specific cases also be solved analytically [11,18]. To take into account the effect of doping one can write in first order approximation…”

Section: Samples For In Situmentioning

confidence: 99%

“…In both structures, extensive {113}-defect formation is observed in the n + substrate after 12 min irradiation. solution of (2) is given by [13,18] …”

Section: Samples For In Situmentioning

confidence: 99%

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont

Anada

Nagase

et al. 2015

Phys. Status Solidi C

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When processing Si nanowire based Tunnel Field Effect Transistors (TFETS's), a significant reduction of B diffusion with decreasing nanowire diameter is observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In this study, Ultra High Voltage Electron Microscopy (UHVEM) is used to study in situ the formation of self‐interstitial clusters in nanowire based TFET containing samples prepared by Focused Ion Beam (FIB) thinning. Si nanowires with diameters ranging from 40 to 500 nm are irradiated in an UHVEM using different fluxes of 2 MeV electrons at temperatures between room temperature and 375 °C. A strong dependence of defect formation on nanowire radius and on dopant concentration and type is observed. The UHVEM observations are compared with simulations based on quasi‐chemical reaction rate theory and with two dimensional dopant concentration distributions determined with high‐vacuum Scanning Spreading Resistance Microscopy (SSRM). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Assuming steady state and slow recombination of V and I compared with the loss of both point defects at sinks in the bulk and at the specimen surfaces, the rate equations simplify significantly and can in specific cases also be solved analytically [12,20]. To take into account the effect of doping, one can write in first order approximation • C (bottom).…”

Section: Irradiation At 375mentioning

confidence: 98%

“…for z = −l and z = l), and also that dC I,V /dz = 0 for z = 0, the solution of (1) is given by [15,20] …”

Section: Irradiation At 375mentioning

confidence: 99%

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Vanhellemont¹,

Anada²,

Nagase³

et al. 2015

Phys. Status Solidi C

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Si nanowire‐based Tunnel‐Field Effect Transistor (TFET) characteristics are intensively studied as function of nanowire diameter and doping. A significant reduction of B diffusion with decreasing nanowire diameter is e.g. observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In an Ultra High Voltage Electron Microscope (UHVEM), the formation of self‐interstitial clusters can be studied in situ while varying e‐beam flux, irradiation temperature, impurity concentration and capping layers surrounding the nanowires.Results are presented on {113}‐defect formation in Si nanowires with diameters between 40 and 500 nm. The Si nanowires are embedded in SiO2 and are etched into an epitaxial Si stack on a heavily As doped Si substrate. The top layer of the epitaxial stack is in situ B doped or B implanted. In situ UHVEM studies are performed on focused ion beam prepared cross‐section samples, irradiating with different fluxes of 2 MeV electrons between room temperature and 375 °C. A strong dependence of {113}‐defect formation on nanowire radius and doping is observed. The observations are compared with simulations based on quasi‐chemical reaction rate theory. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Sink strengths for thin film surfaces and grain boundaries

Cited by 132 publications

References 10 publications

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

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