Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont, Jan; Anada, Satoshi; Nagase, Takeshi; Yasuda, Hiroyuki; Schulze, Andreas; Bender, Hugo; Rooyackers, R.; Vandooren, A.

doi:10.1002/pssc.201400222

Cited by 2 publications

(8 citation statements)

References 21 publications

(41 reference statements)

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“…The results shown in table 2 suggest that the behavior of larger acceptor atoms, in particular In should be similar to that of the donors. Also the effective diffusivity of the charged intrinsic point defects is influenced by their charge state, by lattice strain due to the with L 0 1 the L 1 value at low doping [19]. This suggests that L 1 increases proportionally to C P in good agreement with the experimental observations in the same figure.…”

Section: And V Distribution In Irradiated Foilssupporting

confidence: 81%

“…This structure is prepared either with an ion implanted or with an epitaxially grown tunnel junction. Results on nanowires with B ion implanted tunnel junctions were presented elsewhere [18,19]. The present study uses only tunnel junctions with epitaxially grown p + layers.…”

Section: Nanowire Structuresmentioning

confidence: 99%

“…A first set of about 150 nm thick cross-section specimens for in situ irradiation was prepared by focused ion beam (FIB) both in the [110] and [100] orientations taking care that most of the nanowires were embedded into the sample thickness. Results on these samples have been published elsewhere [18][19][20].…”

Section: Sample Preparationmentioning

confidence: 99%

“…In our previous studies on in situ {113}-defect generation in nanowires, FIB samples with a fixed thickness of about 150 nm were studied [18][19][20]. For that sample thickness, nanowires of 40 and 50 nm diameter are fully embedded and surrounded by the oxide passivation layer and other device layers shown in figure 1.…”

Section: Observations On Nanowiresmentioning

confidence: 99%

“…with k IX and k VX the sink strengths of the X atom for I and V, respectively. Examples of C I and C V calculated for different foil thicknesses and sink strengths can be found elsewhere [15,[18][19][20].…”

Section: And V Distribution In Irradiated Foilsmentioning

confidence: 99%

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In situUHVEM study of {113}-defect formation in Si nanowires

Vanhellemont¹,

Anada²,

Yasuda³

et al. 2015

Semicond. Sci. Technol.

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High fluxes of electrons with energies above 200 keV can create self-interstitial clusters in thin Si and Ge foils. In TEM, these clusters are observed as so called {113}-defects with {113}-habit planes and elongated along <110>-directions. Previous studies on bulk material showed that dopants, capping layers and local stress fields influence the defect formation kinetics and stability. ).The UHVEM of Osaka university is equipped with an ion trap and is using an oil-free vacuum system so that both the e-beam and the vacuum in the specimen chamber (about 7•10 -6 Pa) are very pure and possible contamination related influences on intrinsic point defect cluster nucleation and growth are reduced to a minimum. This allows in situ study of the formation of selfinterstitial clusters while varying the e-beam flux and irradiation temperature over a wide range.In situ irradiations are performed on cross-section samples with thicknesses ranging from 50 to 400 nm prepared by FIB. Samples are irradiated with different fluxes of 2 MeV electrons at temperatures between room temperature and 375 ºC. A strong dependence of {113}-defect formation on nanowire radius and dopant concentration and type is observed as well as on specimen thickness. The observations are compared with simulations based on quasi-chemical reaction rate theory and with results from scanning spreading resistance microscopy and from earlier work on bulk material.

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Section: And V Distribution In Irradiated Foilssupporting

confidence: 81%

Section: Nanowire Structuresmentioning

confidence: 99%

Section: Sample Preparationmentioning

confidence: 99%

Section: Observations On Nanowiresmentioning

confidence: 99%

Section: And V Distribution In Irradiated Foilsmentioning

confidence: 99%

See 3 more Smart Citations

In situUHVEM study of {113}-defect formation in Si nanowires

Vanhellemont¹,

Anada²,

Yasuda³

et al. 2015

Semicond. Sci. Technol.

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Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

et al. 2022

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Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applications for electronic and microelectronic devices. The properties of Si are affected by impurities and defects introduced into the material either during growth and/or material processing. Oxygen (O) and carbon (C) are the main impurities incorporated into the crystal lattice during growth via the Czochralski method. Both impurities are electrically neutral, however, implantations/irradiations of Si lead to the formation of a variety of oxygen-related and carbon-related defects which introduce deep levels in the forbidden gap, inducing generally detrimental effects. Therefore, to control Si behavior for certain applications, it is important to have an understanding of the properties and fundamental processes related with the presence of these defects. To improve Si, isovalent doping during growth must be employed. Isovalent doping is an important defect-engineering strategy, particularly for radiation defects in Si. In the present review, we mainly focus on the impact of isovalent doping on the properties and behavior of oxygen-related and carbon-related defects in electron-irradiated Si. Recent experimental results from infrared spectroscopy (IR) measurements coupled with theoretical studies involving density functional theory (DFT) calculations, are discussed. Conclusions are reached regarding the role of isovalent doping (carbon, (C), germanium (Ge), tin (Sn), and lead (Pb)) on the suppression of detrimental effects introduced into Si from technologically harmful radiation clusters induced in the course of material processing.

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Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Cited by 2 publications

References 21 publications

In situUHVEM study of {113}-defect formation in Si nanowires

In situUHVEM study of {113}-defect formation in Si nanowires

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

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