Singlemode emission at 2 [micro sign]m wavelength with InP based quantum dash DFB lasers

Zeller, W.; Legge, M.; Somers, A.; Kaiser, W.; Koeth, Johannes; Forchel, A.

doi:10.1049/el:20080088

Cited by 14 publications

(11 citation statements)

References 10 publications

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“…In addition, the short wavelength devices showed a slope efficiency of 0.06 W/A, 76 mA threshold current, and output power > 2.0 mW; while the long wavelength devices showed a slope efficiency of 0.19 W/A, 29 mA threshold current, and output powers > 80 mW [26]. Subsequently, the comparatively inferior performance of the long wavelength InAs Qdash in InGaAs Qwell DFB lasers was improved by Zeller et al [269] and Hein et al [270] who reported single mode lasers at 2.01 µm and 1.89 µm, respectively, at room temperature CW operation. In the former case, a threshold current of 40 mA from 2×900 µ m 2 device showed a high SMSR of > 35 dB with good reliability properties (maintained CW output power at 60 mA up to 4800 h).…”

Section: Single Mode Lasersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Single Mode Lasersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…This ensures that the laser operates in a single longitudinal mode and in combination with the gain bandwidth of the strained quantum well-based SOAs it achieves a tuning range of 31 nm. To our knowledge, such a tuning range exceeds those provided by other monolithic semiconductor devices reported in literature [6,14,15,24,25], be it PICs realized in monolithic [18,19] or hybrid technologies [4,26].…”

Section: Introductionmentioning

confidence: 71%

“…It has been demonstrated that the wavelengths around 2 μm can be generated and amplified using indium phosphide (InP)-based strained InGaAs quantum well and quantum dash-based material systems [13][14][15]. An extended wavelength range of an InP active-passive photonic integration technology platform has been demonstrated in our COBRA research institute up to 1.75 μm, targeting applications in optical coherence tomography [16].…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated widely tunable laser source operating at 2 μm

Latkowski¹,

Hänsel²,

Veldhoven³

et al. 2016

Optica

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We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.

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“…In particular, advanced laser characteristics, such as high modal gain, relatively low threshold current, low internal losses, and high output power, have been recently demonstrated at 1.55 lm for applications in telecommunications [5][6][7] as well as at longer emission wavelengths. [8][9][10] Furthermore, it is worth mentioning that Qdashes may also find applications beyond lasers, as single photon sources emitting at 1.55 lm, further exploiting their quantum properties. 11 The fact that the emission wavelength of Qdashes can be tuned based on their size, 12 can particularly benefit gas sensing applications, which require well-controlled emission wavelengths to match the specific absorption lines of different gases.…”

Section: Introductionmentioning

confidence: 99%

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Papatryfonos

Saladukha

Merghem

et al. 2017

Journal of Applied Physics

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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers

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Singlemode emission at 2 [micro sign]m wavelength with InP based quantum dash DFB lasers

Cited by 14 publications

References 10 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Monolithically integrated widely tunable laser source operating at 2 μm

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

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