2023
DOI: 10.1002/adfm.202300094
|View full text |Cite
|
Sign up to set email alerts
|

Single‐Walled Carbon Nanotube Film as an Efficient Conductive Network for Si‐Based Anodes

Abstract: Silicon-based anodes are considered ideal candidate materials for nextgeneration lithium-ion batteries due to their high capacity. However, the low conductivity and large volume variations during cycling inevitably result in inferior cyclic stability. Herein, a dry method without binders is designed to fabricate Si-based electrodes with single-walled carbon nanotubes (SWCNTs) network and to explore the different mechanisms between SWCNT and multiwalled carbon nanotubes (MWCNTs) as a conductive network. As expe… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
11
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 28 publications
(21 citation statements)
references
References 44 publications
1
11
0
Order By: Relevance
“…An 8 cm −1 of ΔG represents 1% strain in a single CNT, which is about 11 GPa. 64 As shown in Figure 5d, the evolution curve of the red shift of the G band during the lithiation process agrees well with the discharging profile and shows a maximum strain value of 24 GPa when lithiation ends. Upon delithiation, the upshift of the G-band frequency reflects the shortening of the C−C bond, indicating the relaxation of the strain and the volume change recovering of the inner phosphorus.…”
Section: Acs Applied Nano Materialssupporting
confidence: 78%
See 1 more Smart Citation
“…An 8 cm −1 of ΔG represents 1% strain in a single CNT, which is about 11 GPa. 64 As shown in Figure 5d, the evolution curve of the red shift of the G band during the lithiation process agrees well with the discharging profile and shows a maximum strain value of 24 GPa when lithiation ends. Upon delithiation, the upshift of the G-band frequency reflects the shortening of the C−C bond, indicating the relaxation of the strain and the volume change recovering of the inner phosphorus.…”
Section: Acs Applied Nano Materialssupporting
confidence: 78%
“…The elongation of the C–C bonds can be reflected by the G-band shift (Δ G ) in the corresponding Raman spectra. An 8 cm –1 of Δ G represents 1% strain in a single CNT, which is about 11 GPa . As shown in Figure d, the evolution curve of the red shift of the G band during the lithiation process agrees well with the discharging profile and shows a maximum strain value of 24 GPa when lithiation ends.…”
Section: Resultsmentioning
confidence: 99%
“…Another strategy is the composite of Si with carbon-based materials such as a carbon nanotube and graphene. 16,17 These composites partially alleviate volume expansion and enhance the conductivity of the Si anode.…”
Section: ■ Introductionmentioning
confidence: 99%
“…However, the abundant surface area of nanostructured Si brings extensive contact with the electrolyte and continuous consumption of electrolyte from the newly exposed Si surfaces caused by repeated volume expansion, resulting in unstable SEI and increased polarization, which are responsible for capacity attenuation. Another strategy is the composite of Si with carbon-based materials such as a carbon nanotube and graphene. , These composites partially alleviate volume expansion and enhance the conductivity of the Si anode. Nevertheless, the organic nature of carbon-based materials hinders the formation of a stable SEI.…”
Section: Introductionmentioning
confidence: 99%
“…For example, Li et al coated a carbon (C) layer on the surface of Si nanoparticles to resist their volume expansion, but the rigid C shell is easily damaged by the stress accumulated from the volume expansion during lithiation. To ensure conductivity while improving the flexibility of the buffer layer, research has focused on developing some flexible conductive substrates, such as graphene and carbon nanotubes. However, the preparation process of graphene and carbon nanotubes often requires harsh conditions or involves complex synthesis processes that add extra cost to the product. Comparatively, MXene, as a novel transition metal carbide or nitride, combines the properties of graphene and graphene oxide with good electrical conductivity, surface chemistry, hydrophilicity, and excellent mechanical properties, which can be used as a good conductive substrate material. Moreover, its preparation method by etching in LiF-dissolved HCl solution is simple and mild, and it is suitable for large-scale production and application. The general structural formula of MXene is M n +1 X n T x ( n = 1, 2 or 3), in which M represents the former transition metal element, X represents the carbon or/and nitrogen, and T x represents the surface functional group associated with the M layer, such as −F, −O, −OH, etc. , Among them, Ti 3 C 2 T x is the most representative of the MXenes family and has been applied as a conductive buffer substrate for silicon-based anodes.…”
Section: Introductionmentioning
confidence: 99%