1992
DOI: 10.1109/16.108208
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Single-wafer integrated semiconductor device processing

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Cited by 91 publications
(18 citation statements)
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“…The "well diffusion" module in the alternative fab also accelerates diffusion using an oxynitridation-enhanced diffusion process that was demonstrated in the MMST flow. The combination of the multiple implants and enhanced diffusion process resulted in a diffusion time of 5 min in the MMST program [25]. A third example is the approach to gate formation.…”
Section: B Thermal Processesmentioning
confidence: 99%
See 1 more Smart Citation
“…The "well diffusion" module in the alternative fab also accelerates diffusion using an oxynitridation-enhanced diffusion process that was demonstrated in the MMST flow. The combination of the multiple implants and enhanced diffusion process resulted in a diffusion time of 5 min in the MMST program [25]. A third example is the approach to gate formation.…”
Section: B Thermal Processesmentioning
confidence: 99%
“…Silicide and implant annealing, LPCVD, SACVD, and thin oxide processes are based on processes in commercially available tools. The forming gas anneal and well diffusion processes were based on similar processes in the MMST process flow [23]- [25]. Finally, the field oxide process is performed at 30 atmospheres in a high-pressure chamber developed by Gasonics/IPC and demonstrated in the MMST program [24], [13], [26].…”
Section: B Thermal Processesmentioning
confidence: 99%
“…When there are parallel chambers at process step , the successive wafers visit the chambers in a cyclic order during a robot work cycle. For instance, the chamber visit sequence for wafer flow pattern (2,3) is , where is the -th parallel chamber at process step . Such cyclic use of parallel chambers is intended for fair use of the chambers.…”
Section: A Cluster Tool Operation Modelmentioning
confidence: 99%
“…Otherwise, the wafer is subject to quality problems due to residual gases or heat. For example, low pressure chemical vapor deposition (LPCVD) is processed under medium vacuum of 0.25-20 torr, and higher temperature of 550 C-800 C in order to form nonvolatile solid films like nitride, oxide, Epi-Si and poly-Si [2], [3]. When the wafer delay at each process step of LPCVD exceeds 20 s, the wafer surface deteriorates because of excessive exposure to residual gases under high temperature and the wafer is scrapped.…”
Section: Introductionmentioning
confidence: 99%
“…Activity-oriented approach considers cluster tools as (discrete) concurrent systems, in which several activities can be performed simultaneously, for example, different wafers can be processed by different modules at the same time, and also the robotic transporter can be moving to a position required by a future step [26]. Activity-based approach does not focus on any specific sequence of events; it takes into account the whole spectrum of possible behaviors of the analyzed system, so it is more general than the critical-path approach.…”
Section: Introductionmentioning
confidence: 99%