Single step chemical growth of ZnMgS nanorod thin film and its DFT study

Dive, Avinash S.; Gattu, Ketan P.; Huse, Nanasaheb P.; Upadhayay, Devesh R.; Phase, D. M.; Sharma, Ramphal

doi:10.1016/j.mseb.2017.11.018

“…Mgcontaining II-VI semiconductors, for example, have been employed in optoelectronic devices [6]. Magnesium is an excellent doper element for substituting Zn in its lattice and bridging bandgap in the ultraviolet area because its radius is comparable to that of the Zn2+(0,60 A) ion [7,8]. Due to its comparable ionic radius to that of zinc and its history of utilization as an eco-friendly phosphor encompasses a diverse spectrum of economic sectors, magnesium was selected as the dopant material for this particular research project.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of Mg doped ZnS thin films via spray pyrolysis

Ali¹,

Rasheed²,

Abdulameer³

et al. 2023

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Chemical spray pyrolysis (CSP) was utilized to create pure Zinc Sulfide (ZnS) and magnesium (Mg) doped thin films on a clean glass substrate at a temperature equal to 400°C. X-ray diffraction test revealed a cubic wurtzite crystal structure with average crystallite sizes of 10.99 and 12.27 nm for ZnS and ZnS: Mg, respectively. XRD analysis of the doped films revealed a polycrystalline structure with a predominant peak along the (220) plane and additional peaks along the (111), (200), and (222) planes. The grain size raised from 10.99 to 12.27 nm as a result of the XRD patterns. The increase in Mg content from 0% to 3%, affect the bandgap that fell from 3.52 to 3.42 eV. As the Mg content increased, the transmittance and refractive index of the films was lowered.

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“…Mgcontaining II-VI semiconductors, for example, have been employed in optoelectronic devices [6]. Magnesium is an excellent doper element for substituting Zn in its lattice and bridging bandgap in the ultraviolet area because its radius is comparable to that of the Zn2+(0,60 A) ion [7,8]. Due to its comparable ionic radius to that of zinc and its history of utilization as an eco-friendly phosphor encompasses a diverse spectrum of economic sectors, magnesium was selected as the dopant material for this particular research project.…”

Section: Introductionmentioning

confidence: 99%

Preparation and analysis of Ag2Se1-xTex thin film structure on the physical properties at various temperatures by thermal evaporation

Ali¹,

Khudayer²

2023

CL

4

0

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Chemical spray pyrolysis (CSP) was utilized to create pure Zinc Sulfide (ZnS) and magnesium (Mg) doped thin films on a clean glass substrate at a temperature equal to 400°C. X-ray diffraction test revealed a cubic wurtzite crystal structure with average crystallite sizes of 10.99 and 12.27 nm for ZnS and ZnS: Mg, respectively. XRD analysis of the doped films revealed a polycrystalline structure with a predominant peak along the (220) plane and additional peaks along the (111), (200), and (222) planes. The grain size raised from 10.99 to 12.27 nm as a result of the XRD patterns. The increase in Mg content from 0% to 3%, affect the bandgap that fell from 3.52 to 3.42 eV. As the Mg content increased, the transmittance and refractive index of the films was lowered.

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“…Therefore, it can be summarized that bandgap engineering is possible by controlling the synthesis processes of II-VI group ternary alloy ZnMgS. This ternary alloy has successfully been synthesized by various physical techniques, such as molecular beam epitaxy [18,19], metalorganic vapor phase epitaxial growth [20], solid solution [15,21,22], sputtering [15], and chemical approach [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

An Investigation on Structural and Optical Properties of Zn1−xMgxS Thin Films Deposited by RF Magnetron Co-Sputtering Technique

Bashar

¹

,

Yusoff

²

,

Abdullah

³

et al. 2020

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In this paper, Zn1−xMgxS thin films were co-sputtered on glass substrates using ZnS and MgS binary target materials under various applied RF power. The compositional ratio of Zn1−xMgxS films was varied by changing the RF power at an elevated temperature of 200 °C. The structural and optical properties were studied in detail. The structural analysis shows that the co-sputtered Zn1−xMgxS thin films have a cubic phase with preferred orientation along the (111) plane. The lattice constant and ionicity suggest the presence of a zincblende structure in Zn1−xMgxS thin films. Zn1−xMgxS thin films have transmittance over 76%. The extrapolation of optical characteristics indicates that direct bandgaps, ranging from 4.39 to 3.25 eV, have been achieved for the grown Zn1−xMgxS films, which are desirable for buffer or window layers of thin film photovoltaics.

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Single step chemical growth of ZnMgS nanorod thin film and its DFT study

Cited by 10 publications

References 33 publications

Physical properties of Mg doped ZnS thin films via spray pyrolysis

Physical properties of Mg doped ZnS thin films via spray pyrolysis

Preparation and analysis of Ag2Se1-xTex thin film structure on the physical properties at various temperatures by thermal evaporation

An Investigation on Structural and Optical Properties of Zn1−xMgxS Thin Films Deposited by RF Magnetron Co-Sputtering Technique

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