Thin-film photovoltaic cells using Cu2ZnSnS4 (CZTS, p-type) have many advantages, such as high photoconversion,
low cost, and great tunability with earth-abundant, nontoxic elements,
all of which are necessary to be long-term contributors to next-generation
solar energy harvesting. Accurate measurements of bonding and band
structures of both the thin-film materials and their interfaces are
paramount to designing the solar devices layer-by-layer. Here, finely
tuned 1 μm thick CZTS films, 50 nm thick CdS layers (n-type),
and their 1 μm/2 nm p–n junction were fabricated inexpensively
using our previously studied methods and investigated extensively
for maximizing the key interface in the CZTS solar devices. Synthesized
bulk CZTS and CdS were analyzed for structural deviations and crystal
defects using synchrotron-based (SR) X-ray absorption fine structure
(XAFS) along with simulated XAFS patterns. The structural properties
of the two materials were designed to favor photovoltaic activity.
Interface valence band structures of the CZTS/CdS p–n junction
were measured through SR X-ray photoelectron spectroscopy (SR-XPS)
and compared with the ones simulated using density functional theory.
A full band diagram was constructed from XPS of the bulk films and
SR-XPS of the interface, providing guidelines in optimizing charge-carrier
extraction from the CZTS absorber to CdS buffer layer. It turns out
that a small spike-like interface in the conduction band overlap was
formed, maintaining a strong internal bias, while favoring a small
energy barrier to prevent large-scale recombination from occurring.
A large open-circuit voltage was obtained in the preliminary solar
cell devices built on the small spike-like interface.