Single-spin measurement using single-electron transistors to probe two-electron systems

Abstract

We present a method for measuring single spins embedded in a solid by probing two-electron systems with a single-electron transistor ͑SET͒. Restrictions imposed by the Pauli principle on allowed two-electron states mean that the spin state of such systems has a profound impact on the orbital states ͑positions͒ of the electrons, a parameter which SET's are extremely well suited to measure. We focus on a particular system capable of being fabricated with current technology: a Te double donor in Si adjacent to a Si/SiO 2 interface and lying directly beneath the SET island electrode, and we outline a measurement strategy capable of resolving singleelectron and nuclear spins in this system. We discuss the limitations of the measurement imposed by spin scattering arising from fluctuations emanating from the SET and from lattice phonons. We conclude that measurement of single spins, a necessary requirement for several proposed quantum computer architectures, is feasible in Si using this strategy.

Solid-state nuclear-spin quantum computer based on magnetic resonance force microscopy

“…This dependence was discussed in [14] in connection with quantum computation using nuclear spins of 31 P atoms implanted in silicon. (See also [15]- [17].) Suppose that the frequency of the electron spin transition is f e0 for the ground state of the nuclear spin, |0 n , and f e1 for the excited state of the nuclear spin, |1 n .…”

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

“…The scanning tunnelling microscope (STM) has been used to characterize defect states of single dopants 2 and to manipulate their position and charge state [5][6][7][8] . There are predictions that double donors, which can deliver two electrons, may be particularly useful for addressing spin states in quantum computers 9,10 .…”

Quantum control and manipulation of donor electrons in Si-based quantum computing

“…22 (A tensile strain has the same effect on the valley degeneracy). 23 Therefore, the ground state at the interface only includes the Bloch states from the z and -z valleys.…”