Single source precursors for fabrication of I–III–VI2 thin-film solar cells via spray CVD

A High‐Efficiency Solution‐Deposited Thin‐Film Photovoltaic Device

“…Currently, these processing issues are primarily addressed for high-efficiency devices by using multistep vacuum-based techniques (e.g., evaporation or sputtering). [9][10][11][12] Several solution-based approaches have also been reported, including (with best power conversion efficiencies achieved) electrochemical deposition (7% for all elements deposited at once, 9% for deposition of metals followed by a separate hightemperature selenization step), [13][14][15] spray pyrolysis/spray chemical vapor deposition (CVD) ( 5%), [16,17] and nanoparticle-precursor deposition (14%). [18][19][20] Limitations of previously reported solution-based CIGS deposition approaches include: (i) incorporation of carbon, oxygen, and other impurities from the precursors or starting solutions; (ii) the need for multistep processing (e.g., a typical nanoparticle process involves making metal oxide nanoparticles, depositing the oxides as films, reducing the films to metals using a hightemperature reduction step, followed by high-temperature selenization); [19,20] (iii) the requirement for a high-temperature selenization/sulfurization step using toxic gases (e.g., H 2 Se) and/or a post-deposition cyanide-bath etch to achieve adequate grain growth and improve phase purity; and (iv) difficulty incorporating dopants such as Ga in a uniform and controllable fashion.…”

Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic Devices

“…When complete evaporation of solvents is achieved before the droplets contact the surface (especially in the case of volatile precursors), this method is called Spray CVD (chemical vapor deposition). [66,67] While the possibility to avoid subsequent hightemperature anneal is advantageous in these spray-growth methods (notably distinguished from spray coating), they require precise process control and generally longer deposition times than sequential direct liquid coating approaches. In addition, residual aerosols and/or vapors account for lower materials utilization and require enhanced safety and environmental precautions.…”

“…Spray pyrolysis and Spray-CVD have been used for the deposition of CuInS 2 [65][66][67] as well as oxides that were later treated in chalcogen vapor to form CuInSe 2 . [68,69] Power conversion efficiencies of up to 5 % have been reported using this approach.…”

Photoelectrochemical characteristics of pulse electrodeposited CuInS2 films

“…To this target, many studies have focused on finding the correlation between properties and preparation method and its conditions. CuInS 2 thin films have been deposited by various techniques, such as coevaporation [4], molecular beam deposition [5], chemical vapour deposition [6], spray pyrolysis [7], chemical bath deposition [8], ion layer gas reaction [9], electrodeposition [10], solution-controlled growth [11] and solvothermal deposition [12]. In this work, CuInS 2 films were deposited by the pulse plating technique at different duty cycles in the range of 6-50% and the films were characterized for their structural, optical and electrical properties.…”