Single shot excimer laser crystallization and LPCVD silicon TFTs

Helen, Youri; Mourgues, K.; Raoult, F.; Mohammed‐Brahim, Tayeb; Bonnaud, Olivier; Rogel, Régis; Prochasson, Sylvie; Boher, Pierre; Zahorski, D.

doi:10.1016/s0040-6090(98)01377-7

Cited by 23 publications

(10 citation statements)

References 12 publications

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“…13 With the advent of high power excimer lasers, the single pulse scheme has become an attractive alternative, due to its ability to crystallize a large area with a single pulse. 14 A laser threshold energy density exists for the conversion of a-Si:H to polycrystalline silicon, corresponding to the threshold intensity for surface melting. 1 Films start to melt after this energy density, with the melt depth increasing with increase of energy density.…”

Section: Introductionmentioning

confidence: 99%

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Adikaari¹,

Silva²

2005

Journal of Applied Physics

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Excimer laser crystallization is used to produce layered nanocrystalline silicon from hydrogenated amorphous silicon, using a partial melting process. Three types of hydrogenated amorphous silicon samples, 100, 300, and 500 nm thick, were laser treated in order to investigate the changes to the structural, optical, and electrical properties as a function of amorphous silicon thickness with excimer laser crystallization. The resulting nanocrystalline thin films were characterized using Raman spectroscopy, optical absorption measurements, atomic force microscopy, forward recoil spectrometry, and current-voltage measurements. The relationship of crystalline volume and laser energy density was established, along with the behavior of the optical gap and its relationship to hydrogen content. Surface roughness effects are discussed in the context of photovoltaic applications. The effect of increased mobility on photoconductivity after excimer laser crystallization is also examined.

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Section: Introductionmentioning

confidence: 99%

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Adikaari¹,

Silva²

2005

Journal of Applied Physics

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“…Figure 5 shows the surface morphology of the film before and after single-pulse laser annealing using different laser fluences. Helen et al 26 found that the threshold of big surface-roughness change for amorphous Si films is between 450 and 500 mJ/cm 2 , using a 308 nm XeCl excimer laser. 5͑b͒ and 5͑c͒, physical modification is observed after laser annealing at 100 mJ/cm 2 and above.…”

Section: Resultsmentioning

confidence: 99%

Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition

Tan

Chen

et al. 2004

Journal of Laser Applications

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We report the laser annealing effects on the structures and properties of silicon nanocrystal films fabricated by pulsed-laser deposition in inert argon gas. The surface morphology of the as-deposited films is greatly determined by the angle relative to the laser ablation spot. Photoluminescence ͑PL͒ peaked at 620 nm corresponding to 2.0 eV is observed in the as-deposited films. After single-pulse laser annealing, better crystallinity and increased PL intensity are obtained. The PL peak remains at 620 nm. High laser fluence causes damage to the films and the threshold fluence for laser ablation is around 100 mJ/cm 2 . Multiple-pulse laser annealing with increasing pulse number at fluences below the threshold of laser ablation can provide better crystallization and property improvement than single-pulse annealing. There are a certain number of pulses for the best multiple-pulse annealing effect before damage or laser ablation occur.

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“…TFTs were fabricated in Rennes using this laser for the crystallization of the usual LPCVD amorphous silicon. The best performances of TFTs were obtained when using 10 successive shots for the crystallization of the same area (12). In this case, the laser energy window, where the regime of super lateral growth (SLG) of grains occurs, is enlarged participating then to the increase of the reliability of the process.…”

Section: Excimer Laser Crystallization (Ecl-ltps) Of Amorphous Siliconmentioning

confidence: 99%

(Invited) Twenty Five Years of Improvement of the Silicon Based TFT: From As-Deposited Polycrystalline Silicon to Nanostructured Silicon Deposited at Very Low Temperature

Mohammed‐Brahim

Bonnaud

2013

ECS Trans.

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25 years of effort made in Rennes 1 University to improve the performance of silicon based thin film transistors are reviewed. The review is focused mainly on the technological progress. It starts from the end of 80's at the time where the main work was devoted to understand the physical properties of polycrystalline silicon that was used as active layer of transistors for the first time. It finishes with microcrystalline silicon TFTs fabricated at low temperature compatible with the use of transparent plastic substrates, going through the different crystallized forms of silicon. These different crystallized forms obtained by different techniques allow silicon to be able to stay as the basic material of TFTs whatever the applications and the substrates

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Single shot excimer laser crystallization and LPCVD silicon TFTs

Cited by 23 publications

References 12 publications

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon

Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition

(Invited) Twenty Five Years of Improvement of the Silicon Based TFT: From As-Deposited Polycrystalline Silicon to Nanostructured Silicon Deposited at Very Low Temperature

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