Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

“…Therefore, more rigorous physical origin of NBS-induced g DA (E) decrease would be validated as further research besides ozone (O 3 ) as the well-known origin of the accepter states [11]. In the present work, all these experimental DOS redistributions of g DA (E) and g TD (E) are well fitted with the acceptable error margins by DOS model as [6] …”

“…3(a) shows the distributions of the subgap DOS (g(E)) as a function of an energy from the valence band maximum (E v ) of the polymer semiconductor. The experimentally extracted g(E) distributions from the reproducible MPCV technique based on the equivalent circuit model with C-V measurement [6] indicate that the acceptor-like deep states g DA (E) of Gaussian profiles with the peak energy (E DA ) are suppressed moving toward mid-gap from E DA = 0.05 eV to 0.1 eV and the exponential donor-like tail states g TD (E) near the band edge (E v ) increase as t NBS is applied and increased [inset of Fig. 3(a)].…”

“…For quantitative analysis, sub-bandgap density-of-states (DOS) in the polymer channel of the fabricated PTFTs are extracted from the monochromatic photonic capacitance-voltage (MPCV) technique [6] according to the various t NBS . Then, in addition to the charge trapping into the gate oxide and interface, the effects of DOS redistribution and the source/drain contact resistance (R SD ) on the NBS instability will be discussed as the main origins quantitatively.…”

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

“…Quantitative analyses are carried out by the combination of extracted sub-gap density of states (DOS) and device simulation. [12][13][14][15] Studies indicate that peroxide formation reflects well the observed behavior of the TFT under NBIS.…”

Parameter extraction methodology for amorphous IGZO thin film transistors

“…Although there are many works for extracting the density of states (DOS) [8][9] or the parasitic resistance [10], there are very few used for the electrical parameter extraction, which actually need TCAD simulations although they are also based on an empirical mobility model [11].…”