2004
DOI: 10.1049/el:20045718
|View full text |Cite
|
Sign up to set email alerts
|

Single-pole-four-throw switch using high-aspect-ratio lateral switches

Abstract: A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
7
0

Year Published

2007
2007
2022
2022

Publication Types

Select...
6
3
1

Relationship

0
10

Authors

Journals

citations
Cited by 21 publications
(7 citation statements)
references
References 4 publications
0
7
0
Order By: Relevance
“…Electrostatic devices, on the contrary, can be produced with simpler manufacturing processes, but require higher actuation voltages. However, the example devices reported in Table 2 show that research is aimed at improving the electrical requirements for electrostatic MEMS switches, with actuation voltages scaling from approximately 30-50 V [77,79,81,84] to 10-15 V [85,86]. Further design and fabrication enhancements have enabled the production of electrostatic MEMS switches with actuation voltages lower than 10 V [21,[45][46][47].…”
Section: Examples Of Generic Mems Switches With Various Actuation Schmentioning
confidence: 99%
“…Electrostatic devices, on the contrary, can be produced with simpler manufacturing processes, but require higher actuation voltages. However, the example devices reported in Table 2 show that research is aimed at improving the electrical requirements for electrostatic MEMS switches, with actuation voltages scaling from approximately 30-50 V [77,79,81,84] to 10-15 V [85,86]. Further design and fabrication enhancements have enabled the production of electrostatic MEMS switches with actuation voltages lower than 10 V [21,[45][46][47].…”
Section: Examples Of Generic Mems Switches With Various Actuation Schmentioning
confidence: 99%
“…The incorporation of MEMS-based fabrication technologies into microwave and millimeter-wave systems offers viable routes toward ICs with MEMS actuators, antennas, switches, and transmission lines [1][2][3][4][5][6][7]. Micro-electromechanical system (MEMS) technology has attracted tremendous interest across the world, and research efforts are constantly growing for reliability and integration purposes.…”
Section: Introductionmentioning
confidence: 99%
“…SPMT switches containing thin metal films do not maintain mechanical reliability due to film deformation caused by heat or stress during complex fabrication processes [4]. Even if those conditions are optimal, insertion loss is large due to substrate loss and open-stub effects caused by multipath fading [5]. Also, high drive voltage is required to generate essentially a large contact force for low insertion loss [6].…”
Section: Introductionmentioning
confidence: 99%