Single-photon emission from exciton complexes in individual quantum dots

Thompson, R. M.; Stevenson, R. M.; Shields, A. J.; Farrer, I.; Lobo, Charlene; Ritchie, D. A.; Leadbeater, M.; Pepper, M.

doi:10.1103/physrevb.64.201302

Cited by 147 publications

(80 citation statements)

References 22 publications

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“…In recent times, semiconductor quantum dots (QDs) have attracted increased attention because of their potential application in optoelectronic devices, such as, for quantum computation [1], lasers [2], single photon sources [3][4][5], charge storage devices [6] and single photon detectors [7]. Because of the need to control the size, shape, and distribution of these zero-dimensional structures, much effort has been put forth to fabricate QDs with uniformity and precision.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

et al. 2007

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The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

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Section: Introductionmentioning

confidence: 99%

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

et al. 2007

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“…S ince the early demonstration of a quantum dot (QD) singlephoton source [1][2][3][4][5] , there have been numerous reports on single-photon emission in a wide range of temperatures, with or without the use of a microcavity and with optical or electrical excitation [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . Generally, the electrically driven singlephoton emitters are all-epitaxial heterostructures.…”

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confidence: 99%

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

et al. 2013

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In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that shortwavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In 0.25 Ga 0.75 N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of B70%.

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“…Single InAs quantum dots have attracted escalating interest recently due to their suitability as the basis for photon emission technology for applications in quantum information. Much progress has been made, particularly in the field of single-photon emission devices, [1][2][3] which have been demonstrated with electrical injection, 4 high efficiency, 5 and strong Purcell enhancement of the spontaneous emission rate. [6][7][8][9] It has been proposed that the decay of the biexciton state to the ground state could be used to create pairs of photons 10 entangled by their polarization, 11 due to the superposition of the two alternate decay paths, distinguished by the order in which the spin-up and spin-down excitons recombine.…”

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confidence: 99%

“…3 One sample was left unannealed and six thermally annealed for 5 and 10 min at 650°C, 5 and 15 min at 700°C, and 5 and 10 min at 750°C, respectively. Single quantum dots were isolated by 2-m-diameter apertures in gold films, deposited on the surface of the samples after annealing.…”

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confidence: 99%

Inversion of exciton level splitting in quantum dots

et al. 2005

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The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.Comment: 12 pages, 4 figure

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Single-photon emission from exciton complexes in individual quantum dots

Cited by 147 publications

References 22 publications

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

Inversion of exciton level splitting in quantum dots

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