In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based single quantum dots. It has been suggested that shortwavelength blue single-photon emitters would be useful for free-space quantum cryptography, with the availability of high-speed single-photon detectors in this spectral region. Here we demonstrate blue single-photon emission with electrical injection from an In 0.25 Ga 0.75 N quantum dot in a single nanowire. The emitted single photons are linearly polarized along the c axis of the nanowire with a degree of linear polarization of B70%.

Inversionless ultralow threshold coherent emission, or polariton lasing, can be obtained by spontaneous radiative recombination from a degenerate polariton condensate with nonresonant excitation. Such excitation has, hitherto, been provided by an optical source. Coherent emission from a GaAs-based quantum well microcavity diode with electrical injection is observed here. This is achieved by a combination of modulation doping of the wells, to invoke polariton-electron scattering, and an applied magnetic field in the Faraday geometry to enhance the exciton-polariton saturation density. These measures help to overcome the relaxation bottleneck and to form a macroscopic and degenerate condensate as evidenced by angle-resolved luminescence, light-current characteristics, spatial coherence, and output polarization. The experiments were performed at 30 K with an applied field of 7 T.

Room temperature electrically pumped inversionless polariton lasing is observed from a bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs at 169 A/cm(2) in the light-current characteristics, accompanied by a collapse of the emission linewidth and small blueshift of the emission peak. Measurement of angle-resolved luminescence, polariton condensation and occupation in momentum space, and output spatial coherence and polarization have also been made. A second threshold, due to conventional photon lasing, is observed at an injection of 44 kA/cm(2).

We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing.

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We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

This paper presents a novel approach towards Indic handwritten word recognition using zone-wise information. Because of complex nature due to compound characters, modifiers, overlapping and touching, etc., character segmentation and recognition is a tedious job in Indic scripts (e.g. Devanagari, Bangla, Gurumukhi, and other similar scripts). To avoid character segmentation in such scripts, HMMbased sequence modeling has been used earlier in holistic way. This paper proposes an efficient word recognition framework by segmenting the handwritten word images horizontally into three zones (upper, middle and lower) and recognize the corresponding zones. The main aim of this zone segmentation approach is to reduce the number of distinct component classes compared to the total number of classes in Indic scripts. As a result, use of this zone segmentation approach enhances the recognition performance of the system. The components in middle zone where characters are mostly touching are recognized using HMM. After the recognition of middle zone, HMM based Viterbi forced alignment is applied to mark the left and right boundaries of the characters. Next, the residue components, if any, in upper and lower zones in their respective boundary are combined to achieve the final word level recognition. Water reservoir feature has been integrated in this framework to improve the zone segmentation and character alignment defects while segmentation. A novel sliding window-based feature, called Pyramid Histogram of Oriented Gradient (PHOG) is proposed for middle zone recognition. PHOG features has been compared with other existing features and found robust in Indic script recognition. An exhaustive experiment is performed on two Indic scripts namely, Bangla and Devanagari for the performance evaluation. From the experiment, it has been noted that proposed zone-wise recognition improves accuracy with respect to the traditional way of Indic word recognition.Cite this as 1 @article{roy2016hmm,

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