Single photon emission from deep-level defects in monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="bold">WS</mml:mi><mml:msub><mml:mi mathvariant="bold">e</mml:mi><mml:mn mathvariant="bold">2</mml:mn></mml:msub></mml:mrow></mml:math>

Ye, Yanxia; Dou, Xiuming; Ding, Kan; Chen, Yu; Jiang, Desheng; Yang, Fuhua; Sun, Bo

doi:10.1103/physrevb.95.245313

Cited by 26 publications

(20 citation statements)

References 28 publications

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“…SiO 2 on silicon Ref. 56 10.3 ± 0.5 SiO 2 on silicon 4 Ref. 19 3-8 silica nano-pillars on silicon 1 Etched hole arrays on bare silicon substrates.…”

Section: 3mentioning

confidence: 99%

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces

et al. 2018

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Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on creation of strain induced single photon sources using a WSe 2 monolayer on a silver substrate, coated with a very thin dielectric layer. We identify quantum emitters which are formed at various locations in the sample. The emission is highly linearly polarized, stable in linewidth and decay times down to 100 ps are observed. We provide numerical calculations of our monolayer-metal device platform to assess the strength of the radiative decay 1 rate enhancement by the presence of the plasmonic structure. We believe, that our results represent a crucial step towards the ultra-compact integration of high performance single photon sources in nanoplasmonic devices and circuits.Single photon sources are considered as a key building block for quantum networks, quantum communications and optical quantum information processing. 15 To fully harness the properties of such non-classical light sources, core requirements include their long-term stability, 6,7 brightness 811 and scalability in the fabrication process. Recently, quantum light emission from inorganic two dimensional layers of transition metal dichalcogenides (TMDC) 1216 has been demonstrated. While the nanoscopic origin of tight exciton localization is still to be explored, engineering the morphology of carrier substrates and thus the strain eld in the monolayers 17 has enabled position control over such quantum emitters. 1820 One outstanding problem, which we address in this report, is the emission enhancement of such quantum emitters in atomic monolayers. The layered nature of the materials and their intrinsic robustness with regard to open surfaces (due to absence of dangling bonds) naturally puts plasmonic approaches in the focus of interest. A single dipole emitter close to a plasmonic nanoparticle, which act as an optical antenna, 21,22 experience a modied photonic mode density, leading to enhanced radiative decay rates and thus a spontaneous emission enhancement. The enhanced intensity results from an amplied electric eld intensity due to localized surface plasmon resonance of metal nanoparticles. 18,23,24 Plasmonic tuning of the optical properties of molecules, such as dyes close to a metal surface is a topic which is subject to investigations since the 1980s. Pronounced coupling phenomena of dye molecules with surface plasmon resonances in ultra-thin silver lms has been shown via luminescence and absorption studies, 25 as well as resonant transmission. 26 Enhanced uorescence of molecules coupled to Ag-islands has been studied in, 27 whereas uorescence quenching of dye molecules or colloidal CdSe quantum dots in the closest vicinity of metallic surfaces has also been identied to act signicantly on the emitters' decay dynamics. 28,29 Hence it is important to separate the emitters from the metallic layers via a non-conduct...

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“…SiO 2 on silicon Ref. 56 10.3 ± 0.5 SiO 2 on silicon 4 Ref. 19 3-8 silica nano-pillars on silicon 1 Etched hole arrays on bare silicon substrates.…”

Section: 3mentioning

confidence: 99%

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces

et al. 2018

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“…This property can be exploited to funnel excitons created upon irradiation to well defined regions characterised by a reduced gap 14,15 . Upon exciton recombination, quantised single-photon emission is achieved [16][17][18][19][20][21][22][23] , that represents a key ingredient for quantum information processing and quantum technologies 24 . At the basis of single-photon quantized emission is the localisation of bound states by strain-induced quantum confinement, that can be also used as spin-valley qubits [25][26][27] .…”

mentioning

confidence: 99%

Strain-induced bound states in transition-metal dichalcogenide bubbles

Chirolli¹,

Prada²,

Guinea³

et al. 2019

2D Mater.

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We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS2, WSe2, WS2 and MoSe2, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriers. arXiv:1811.01890v2 [cond-mat.mes-hall]

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“…The decay time of these emissions is around 10 ns, which is tenfold longer than that of the broad localized excitons. This reveals that the exciton bound to deep-level defects is the underlying mechanism for the observed single photon emissions [358]. In 2017, largescale deterministic creation of quantum emitters was demonstrated experimentally [359,360].…”

Section: Transition Metal Dichalcogenidesmentioning

confidence: 91%

“…For a MoS2 monolayer, there exist several types of intrinsic defects [350,351]. The defect based single-photon sources were realized in WSe2 [352][353][354][355][356][357][358][359][360]. The potential advantage of a 2D single-photon source is obvious, for it offers the possibility of integrating single-photon sources with van der Waals heterostructures.…”

Section: Transition Metal Dichalcogenidesmentioning

confidence: 99%

Material platforms for defect qubits and single-photon emitters

Zhang

Cheng

Chou

et al. 2020

Applied Physics Reviews

138

124

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Quantum technology has flourished from quantum information theory and now provides a valuable tool that researchers from numerous fields can add to their toolbox of research methods. To date, various systems have been exploited to promote the application of quantum information processing. The systems that can be used for quantum technology include superconducting circuits, ultra-cold atoms, trapped ions, semiconductor quantum dots, and solid-state spins and emitters. In this review, we will discuss the state of the art on material platforms for spin-based quantum technology, with a focus on the progress in solid-state spins and emitters in several leading host materials, including diamond, silicon carbide, boron nitride, silicon, two-dimensional semiconductors, and other materials. We will highlight how first-principles calculations can serve as an exceptionally robust tool for finding the novel defect qubits and single photon emitters in solids, through detailed predictions of the electronic, magnetic and optical properties. c-BN ON-VB ~1.63 [147] Bi 3.3 [148] Bi-VN 3.57 [148] CN 4.09 [149] Si impurity 4.94 [150] Bi-VN 0.017 [150] Si impurity 0.007 [150] ZnO VZn 2.331 [151] CuZn 2.859 [152] VZn-ClO 2.365 [153] DAP 3.333 [154] CuZn 0.0015 [155] DAP 0.996 [156] GaN 0.855 a [157] 3.33 b , 2.594 c , 1.82 d Cr(4+) 1.193 [132] 0.71 [158] 0.63 c Cr(4+) 0.73 [132] Silicon G-centre CiCs 0.969 [159] Er(3+) 0.805 h [160] G-centre CiCs 0.30 [161] REI YAG:Pr(3+) 4.122 [162] Ce(3+) 2.536 [163] YSO: Er(3+) 0.807 [164] YVO:Yb(3+) 1.280 [165] LaFe3:Pr(3+) 2.594 [166] YAG:Ce(3+) 0.002 [167] a The possible candidates are CNONHi [168], CN-Hi [168], or CN-SiGa [169]. b Theoretical studies predicted that the possible candidates are CN [170] or other complexes [171], such as VGa-3H or VGaON-2H. Experimental studies proposed that the possible candidates are CN-ON [172,173] and CN-SiGa [173]. c Point defects near cubic inclusions within hexagonal lattice of GaN were proposed [174].

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Single photon emission from deep-level defects in monolayerWSe2

Cited by 26 publications

References 28 publications

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces

Strain-induced bound states in transition-metal dichalcogenide bubbles

Material platforms for defect qubits and single-photon emitters

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Single photon emission from deep-level defects in monolayerWSe2

Cited by 26 publications

References 28 publications

Spontaneous Emission Enhancement in Strain-Induced WSe2 Monolayer-Based Quantum Light Sources on Metallic Surfaces

Spontaneous Emission Enhancement in Strain-Induced WSe2 Monolayer-Based Quantum Light Sources on Metallic Surfaces

Strain-induced bound states in transition-metal dichalcogenide bubbles

Material platforms for defect qubits and single-photon emitters

Contact Info

Product

Resources

About

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces

Spontaneous Emission Enhancement in Strain-Induced WSe₂ Monolayer-Based Quantum Light Sources on Metallic Surfaces