Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

Abstract

Tellurium (Te), an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent quais-1D crystal structure. Synthesizing ultrathin Te crystal with uniform orientation is important to its large-scale device applications, but that remains a great challenge. Herein, the nanoscale grooves-induced unidirectional epitaxy growth of 1D Te nanowires via physical vapor deposition on the annealed m-plane sapphire is demonstrated. By enhancing the annealing temperature from 1000 to 1300 °C, nanoscale grooves on m-plane sapphire arising along the [1010] direction and gradually distinct, and the corresponding Te nanowires grown on them turns from random to uniform, finally achieving nearly 95% unidirectional Te nanowires. The as-grown Te nanowires possess high crystallinity with clearly chiral helical chains along the c-axis direction and reveal thickness-tunable bandgap with prominent linear-dichroic. As results, the Te nanowire-based photodetectors demonstrate a broadband photoresponse from visible (532 nm) to short-wave infrared (2530 nm), with high responsivity of 327 A W −1 as well as strong and uniform polarization sensitivity (anisotropic ratio = 2.05) to 1550 nm light. The high crystallinity and superior anisotropy of Te nanowires, combined with the orientation-controlled preparation endows it with great feasibility for constructing chip-scale multifunctional optoelectronic devices.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…On the whole, the above results have explained the substantial distinction of the dichroic ratios of the previously reported (quasi-)1D material ( e.g. , Te, 76,77 Sb 2 S 3 , 10,78 Sb 2 Se 3 40,75 ) photodetectors, despite the fact that these devices are built of the same kind of materials. This finding may provide a universal navigation for the optimization of the dichroism of polarization-sensitive photodetectors by leveraging quantum tailoring.…”

Large-area single-crystal TMD growth modulated by sapphire substrates

“…95 Recently, Wei et al annealed an m -plane sapphire at 1300 °C and then grew unidirectionally aligned 1D Te nanowires guided by grooves via physical vapor deposition. 96 At present, there are a few reports about the growth of TMDs on r - and m -plane sapphires. Peters et al grew MoS 2 on annealed r - and m -plane sapphires, most of which were dendritic and had poor crystal quality compared to MoS 2 grown on c - and a -plane sapphires.…”

“…When annealed at 1100 °C for 10 h, the surface will show nanometer grooves with uniform orientation, and after that, the width of the grooves increases as the annealing temperature rises. 96 Differences in surface morphology after annealing of sapphires in different works may be related to the conditions of annealing and the purity of the sapphire surface, since impurities on the sapphire affect the adsorption and diffusion of atoms on the surface. 103…”

Bioinspired Vertical Transistors from Artificial Synapse to Neuromorphic System

“…A summary for the synaptic vertical transistors based on different materials. [66,94,95,104,[107][108][109][110][111] Reproduced with permission. [66] Copyright 2021, John Wiley and Sons.…”