Large-area single-crystal TMD growth modulated by sapphire substrates

Chen, Lina; Cheng, Zhaofang; He, Shaodan; Zhang, Xudong; Deng, Kelun; Zong, Dehua; Wu, Zipeng; Xia, Minggang

doi:10.1039/d3nr05400d

Cited by 2 publications

(1 citation statement)

References 146 publications

(365 reference statements)

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“…For example, (1) significant reduction of channel/electrode contact resistances enabled by the edge-contact geometry . (2) high-quality growth of 2D PtSe 2 layers on single-crystalline sapphire wafers and their water-assisted clean transfer to SiO 2 /Si wafers without employing wafer etchants. − (3) enhanced gate controllability and reduced short-channel effects inherent to top-gating operation. − Further studies will delve deeper into these aspects to better elucidate the underlying mechanisms exclusively contributing to the enhanced FET performances.…”

Section: Resultsmentioning

confidence: 99%

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Han,

Shin,

Ghanipour

et al. 2024

ACS Appl. Mater. Interfaces

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Electronic devices employing two-dimensional (2D) van der Waals (vdW) transition-metal dichalcogenide (TMD) layers as semiconducting channels often exhibit limited performance (e.g., low carrier mobility), in part, due to their high contact resistances caused by interfacing non-vdW three-dimensional (3D) metal electrodes. Herein, we report that this intrinsic contact issue can be efficiently mitigated by forming the 2D/2D in-plane junctions of 2D semiconductor channels seamlessly interfaced with 2D metal electrodes. For this, we demonstrated the selectively patterned conversion of semiconducting 2D PtSe 2 (channels) to metallic 2D PtTe 2 (electrodes) layers by employing a wafer-scale low-temperature chemical vapor deposition (CVD) process. We investigated a variety of field-effect transistors (FETs) employing wafer-scale CVD-2D PtSe 2 /2D PtTe 2 heterolayers and identified that silicon dioxide (SiO 2 ) top-gated FETs exhibited an extremely high hole mobility of ∼120 cm 2 V −1 s −1 at room temperature, significantly surpassing performances with previous wafer-scale 2D PtSe 2 -based FETs. The low-temperature nature of the CVD method further allowed for the direct fabrication of wafer-scale arrays of 2D PtSe 2 /2D PtTe 2 heterolayers on polyamide (PI) substrates, which intrinsically displayed optical pulse-induced artificial synaptic behaviors. This study is believed to vastly broaden the applicability of 2D TMD layers for next-generation, high-performance electronic devices with unconventional functionalities.

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Section: Resultsmentioning

confidence: 99%

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Han,

Shin,

Ghanipour

et al. 2024

ACS Appl. Mater. Interfaces

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Remote epitaxy of single-crystal rhombohedral WS2 bilayers

Chang,

Zhang,

et al. 2024

Nat Commun

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Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V−1s−1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.

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Large-area single-crystal TMD growth modulated by sapphire substrates

Abstract: In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviours associated with the atomic structure of sapphire surfaces and the growth parameters.

Cited by 2 publications

References 146 publications

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Remote epitaxy of single-crystal rhombohedral WS2 bilayers

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