Single-mode, passive antiguide vertical cavity surface emitting laser

Wu, Y.A.; Li, G.S.; Nabiev, R.F.; Choquette, Kent D.; Caneau, C.; Chang-Hasnain, Connie J.

doi:10.1109/2944.401251

Cited by 56 publications

(33 citation statements)

References 15 publications

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“…The latter structure relies on the cavity-induced index step proposed by Hadley [10]. Although these devices display promising results, such as single-mode operation up to [5][6][7][8][9][10][11][12][13][14][15] for diameters as large as 16 m, the power has been limited to less than 2 mW because of the relatively large radiation loss incurred for the fundamental mode, which is inherent to the antiguide structure.…”

Section: Introductionmentioning

confidence: 99%

“…The large built-in index step ( ) provides for mode stability against carrier and thermally induced index variations above threshold. Antiguided VCSELs have been fabricated either by surrounding a low-index core region with a high-index material via a regrowth process [7], [9], or by shifting the cavity resonance toward a longer wavelength outside the core to create an effective low-index core region [8]. The latter structure relies on the cavity-induced index step proposed by Hadley [10].…”

Section: Introductionmentioning

confidence: 99%

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Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Lee

Hagness

Zhou

et al. 2001

IEEE Photon. Technol. Lett.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Lee

Hagness

Zhou

et al. 2001

IEEE Photon. Technol. Lett.

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“…In addition, a large index-step (⌬nϾ0.05) provides for mode stability against carrier-and thermally induced index variations. Antiguided VCSELs have been fabricated either by surrounding a low index core region by regrowth of a highindex material 4 or by creating a low-index core region by shifting the cavity resonance ͑towards longer wavelength͒ outside the core. 5,6 The latter structure relies on the cavityinduced index step proposed by Hadely.…”

mentioning

confidence: 99%

“…Antiguides have demonstrated high-power, single-mode operation, from edge-emitting lasers 3 and, more recently, have been implemented in VCSELs. [4][5][6] The advantage of an antiguide structure is that it provides strong lateral radiation losses, which are highly mode dependent, thus filtering out higher-order spatial modes ͑even for large diameter devices, dϾ6 m͒. In addition, a large index-step (⌬nϾ0.05) provides for mode stability against carrier-and thermally induced index variations.…”

mentioning

confidence: 99%

“…7 These devices display promising results; single-mode operation up to 5 -15 ϫI th for diameters as large as 16 m wide have been achieved. [4][5][6] On the other hand, the power has been limited to Ͻ2 mW because of the relatively large radiation loss incurred for the fundamental mode, which is inherent to the antiguide structure. 8 In order to reduce the edge radiation losses for the fundamental mode of an antiguide structure, antiresonant reflecting optical waveguides ͑ARROWs͒ have been employed for lateral waveguiding in edge emitting lasers.…”

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confidence: 99%

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Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Zhou

Mawst

2000

Applied Physics Letters

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A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers ͑VCSELs͒ incorporating a simplified-antiresonant reflecting optical waveguide ͑S-ARROW͒ design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 m-diam ( ϭ930 nm) S-ARROW VCSEL with a large lateral index step (⌬nϭ0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-single-mode powers is discussed. © 2000 American Institute of Physics. ͓S0003-6951͑00͒05013-0͔Vertical-cavity surface-emitting lasers ͑VCSELs͒ have been of great interest due to their low-threshold, high fiber coupling efficiency, and compact size that make it easier to integrate. Single-mode VCSELs with output powers in the 5-20 mW range would be especially useful for application such as laser printing ( ϭ0.780 m) and telecommunications ( ϭ1.3 m). Promising results in the 3-5 mW range ( ϭ0.85 m) have been obtained from wet-oxidized VCSELs. 1,2 However, due to their weak ͑positive-͒ lateral index-guiding nature, they are very susceptible to gain spatial hole burning and thermal waveguiding, making the VCSEL aperture for single-mode operation very limited in size. To date, the highest fundamental-mode cw output power is 4.8 mW from a 3.5-m-diam oxidized VCSEL, achieved by placing the oxide aperture at the optical field standing-wave null position. 2 To obtain higher single-mode powers, the use of a negative-index guide ͑antiguide͒ is beneficial. Antiguides have demonstrated high-power, single-mode operation, from edge-emitting lasers 3 and, more recently, have been implemented in VCSELs. [4][5][6] The advantage of an antiguide structure is that it provides strong lateral radiation losses, which are highly mode dependent, thus filtering out higher-order spatial modes ͑even for large diameter devices, dϾ6 m͒. In addition, a large index-step (⌬nϾ0.05) provides for mode stability against carrier-and thermally induced index variations. Antiguided VCSELs have been fabricated either by surrounding a low index core region by regrowth of a highindex material 4 or by creating a low-index core region by shifting the cavity resonance ͑towards longer wavelength͒ outside the core. 5,6 The latter structure relies on the cavityinduced index step proposed by Hadely. 7 These devices display promising results; single-mode operation up to 5 -15 ϫI th for diameters as large as 16 m wide have been achieved. [4][5][6] On the other hand, the power has been limited to Ͻ2 mW because of the relatively large radiation loss incurred for the fundamental mode, which is inherent to the antiguide structure. 8 In order to reduce the edge radiation losses for the fundamental mode of an antiguide structure, antiresonant reflecting optical waveguides ͑ARROWs͒ have been employed for lateral waveguiding in edge emitting lasers. 9 In the ARROW structure, a low-index core region is surrounded by a pair of quarter-lateral wave reflector regions, which...

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Ultrafast Nanophotonic Devices for Optical Interconnects

Ledentsov¹,

Shchukin²,

Lott³

2013

Future Trends in Microelectronics

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The ever-growing high serial transmission speed of electrical interfaces (a 4-fold increase in speed each 5 years that is roughly a Moore's Law for data communications) is primarily driven by an increase in microprocessor bandwidth and silicon scaling. The same scaling enables faster and more power efficient CMOS ICs for transceivers operating at these ever-increasing speeds.Electrical interfaces for serial transmission at speeds beyond 10 Gb/s are being standardized for a variety of applications including, for example: Fibre Channel FC16G (expected data rate of 17 Gb/s, expected implementation in 2009); Infiniband (20 Gb/s, 2011); FC32G (34 Gb/s, 2012); CEI-25 (25 and 28 Gb/s), USB 4.0 (expected to be 20-60 Gb/s), and many others.Within this range, the maximum copper link length is limited to meters or even a few centimeters, depending on the particular transmission speed and the form factor of the cables used. Consequently, one must apply fiber optics to extend the link length to the required distances of 0.1-100 meters.High-speed optical components traditionally based on vertical-cavity surface-emitting lasers (VCSELs) are thus of extreme importance for the future development of local and storage area networks, intrasystem links, as well as for applications in optical fiber cables for industrial and consumer applications.The optical transceiver should be capable of operating at the same or higher transmission speed as the electrical interface. Going to parallel optical links starting from a higher serial speed electrical interface using time division demultiplexing would require twice the number of CMOS drivers and amplifiers, and, most importantly, integrated circuits for demultiplexing and multiplexing at both the transmitting and the receiving ends of the link. The latter is prohibitively power-consuming and complex. But developing optical components that are suitable for high-speed transmission and that operate at moderate current densities up to high temperatures, thereby avoiding degradation problems, has always been quite a challenge.The most recent tests on multimode fiber transmission links equipped with VIS devices at both ends, have resulted in error-free transmission at up to 40 Gb/s and are limited only by the overall BERT measurement system. The time needed for a rectangular signal to rise from the 20% to the 80% level after passing through all the components of the optical link test system, including the VCSEL, is 15 to 16 ps. We have determined that the deconvoluted VCSEL rise time is a mere 9 ps or less. Moreover it is particularly important to underline that there is essentially no temperature dependence in the VCSEL's rise time up to a fixed substrate temperature of 100 o C.The next strategic goal for VIS technology is to achieve 60-100 GHz -3dB optical bandwidth via vertical integration of the VCSEL and modulator sections. The reflectance of the top Bragg mirror is electro-optically modulated, the Bragg mirror thus acting as a chopper for the continuous emission from the VCSEL section. Furt...

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Single-mode, passive antiguide vertical cavity surface emitting laser

Cited by 56 publications

References 15 publications

Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers

Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Ultrafast Nanophotonic Devices for Optical Interconnects

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