2000
DOI: 10.1063/1.126127
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Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Abstract: A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers ͑VCSELs͒ incorporating a simplified-antiresonant reflecting optical waveguide ͑S-ARROW͒ design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 m-diam ( ϭ930 nm) S-ARROW VCSEL with a large lateral index step (⌬nϭ0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-si… Show more

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Cited by 29 publications
(25 citation statements)
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(15 reference statements)
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“…Since higher order modes do not meet the antiresonant condition, their losses remain large, leading to a highthreshold gain requirement for those modes. Single-mode operation has been reported from S-ARROW VCSELs [13] with diameters as large as m, although output powers were limited by thermal saturation to 1 mW. Optimization of the growth and fabrication process is expected to allow single-mode output powers in the 5-10-mW range for devices with 6-m-diameter apertures.…”
Section: S-arrow Vcsel Designmentioning
confidence: 99%
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“…Since higher order modes do not meet the antiresonant condition, their losses remain large, leading to a highthreshold gain requirement for those modes. Single-mode operation has been reported from S-ARROW VCSELs [13] with diameters as large as m, although output powers were limited by thermal saturation to 1 mW. Optimization of the growth and fabrication process is expected to allow single-mode output powers in the 5-10-mW range for devices with 6-m-diameter apertures.…”
Section: S-arrow Vcsel Designmentioning
confidence: 99%
“…The latter structure relies on the cavity-induced index step proposed by Hadley [10]. Although these devices display promising results, such as single-mode operation up to [5][6][7][8][9][10][11][12][13][14][15] for diameters as large as 16 m, the power has been limited to less than 2 mW because of the relatively large radiation loss incurred for the fundamental mode, which is inherent to the antiguide structure.…”
Section: Introductionmentioning
confidence: 99%
“…11 These structures support leaky modes with the elements phase-locked in-phase or outof-phase, as well as intermediate modes with varying phase relationships between elements. We show that edge radiation losses and absorption losses selectively placed in the interelement regions of the array can discriminate against unwanted modes.…”
mentioning
confidence: 99%
“…The first growth consists of n-DBR, cavity, one pair of p-DBR and two thin spacer layers of GaAs and GaInP. 11 We selectively etched away these two thin layers under the emitting elements area, and then regrow the top p-DBR. This provides the required index step for antiguiding due to the shift of optical resonant mode in the regions containing the spacer layers.…”
mentioning
confidence: 99%
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