“…The absorption spectra show strong polarized dependence due to the anisotropy of the crystal. Although the peak absorptions of the 4 I 9/2 -4 F 5/2 + 2 H 9/2 transition were all located around 810 nm for all polarizations, which is within the emission wavelengths of the commercial laser diodes, the absorption cross section for the EJN m (26.75 Â 10 À20 cm 2 ) is larger than those for the EJN p (7.81 Â 10 À20 cm 2 ) and EJN g (3.43 Â 10 À20 cm 2 ), and similar to that of the Nd 3+ :YVO 4 crystal for p polarization (29.6 Â 10 À20 cm 2 ) [16,17], which is a wellknown gain medium for microchip lasers [18]. Generally, the thickness of the microchip gain medium is less than 1 mm for obtaining single longitudinal mode laser oscillation, so that crystals with high absorption coefficients should be employed.…”