2015
DOI: 10.7567/jjap.54.060302
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Single-mode operation of GaAsP ring/Fabry–Perot composite cavity semiconductor lasers

Abstract: We designed and fabricated ring/Fabry–Perot composite cavity semiconductor lasers. Single-mode lasing under CW operation was accomplished. The threshold current was 140 mA, and an output power of 12 mW was obtained at an injection current of 250 mA. A side-mode suppression ratio (SMSR) higher than 25 dB was also obtained. The temperature coefficient of the lasing wavelength of 0.23 nm/°C was explained by considering the temperature coefficient of the bandgap energy of the quantum well.

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Cited by 2 publications
(8 citation statements)
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References 21 publications
(22 reference statements)
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“…A ridge channel waveguide using a GaAs 0.86 P 0.14 tensiley strained single-quantum-well separate confinement heterostructure (SQW-SCH) was designed. 23) Lasing of TM mode of higher gain at wavelength ∼800 nm is expected. The ridge width and height were determined as 3.0 and 1.55 µm, respectively.…”
Section: Increase In N Rementioning
confidence: 99%
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“…A ridge channel waveguide using a GaAs 0.86 P 0.14 tensiley strained single-quantum-well separate confinement heterostructure (SQW-SCH) was designed. 23) Lasing of TM mode of higher gain at wavelength ∼800 nm is expected. The ridge width and height were determined as 3.0 and 1.55 µm, respectively.…”
Section: Increase In N Rementioning
confidence: 99%
“…Hence, low-cost devices with simple fabrication processes are still required. Semiconductor ring lasers require relatively simple fabrication processes [19][20][21][22][23] compared with the grating-incorporated lasers. Devices having various configurations were studied to control the lasing of one of the two counter propagating modes 21) as well as the enhancement of light out coupling from the ring cavity.…”
mentioning
confidence: 99%
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