2016
DOI: 10.7567/jjap.55.08rh01
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GaAsP tunable distributed Bragg reflector laser with indium tin oxide thin-film heater

Abstract: A GaAsP quantum well tunable distributed Bragg reflector (DBR) laser with a thin-film heater above a DBR grating was designed and fabricated. As a result of the optimization of the DBR grating to obtain both high reflectivity and sharp wavelength selectivity, single-mode lasing with an output power of 54 mW and a side-mode suppression ratio of 43 dB was obtained. By forming the transparent thin-film heater at a distance of 0.1 µm above the DBR grating, the DBR grating was heated locally and efficiently, and a … Show more

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“…This creates deep level traps that promote nonradiative recombination and therefore degrade the laser performance. Therefore, state-of-the-art DBR lasers emitting in the spectral region between 600 and 1200 nm are distinguished by an active layer extending over the whole cavity including the grating section [3][4][5][6][7][8][9][10]. This is possible because, first, the inter-valence band absorption is small, second, the intra-band (free carrier) absorption can be kept small by an appropriate doping profile, and third, the inter-band absorption can be saturated by optically creating electron-hole pairs.…”
mentioning
confidence: 99%
“…This creates deep level traps that promote nonradiative recombination and therefore degrade the laser performance. Therefore, state-of-the-art DBR lasers emitting in the spectral region between 600 and 1200 nm are distinguished by an active layer extending over the whole cavity including the grating section [3][4][5][6][7][8][9][10]. This is possible because, first, the inter-valence band absorption is small, second, the intra-band (free carrier) absorption can be kept small by an appropriate doping profile, and third, the inter-band absorption can be saturated by optically creating electron-hole pairs.…”
mentioning
confidence: 99%