Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation

“…A 0.3 mm Si-doped GaAs layer of $6 Â 10 16 cm À3 was first grown at 580 C, followed by a 60-A ˚-thick InGaAsN layer containing 2% N and grown at 420 C. High-quality InGaAsN lasers emitting at 1.3 mm can be grown at this temperature. 19) Too high a growth temper-ature may result in spinodal decomposition, 12) and too low a growth temperature degrades PL efficiency. 20) Details of the relation between the quality of the InGaAsN layers and the growth temperatures can be found elesewhere.…”

A Novel Dilute Antimony Channel $\hbox{In}_{0.2}\hbox{Ga}_{0.8}\hbox{AsSb}/\hbox{GaAs}$ HEMT

“…4(b). Possible reasons to account for the increased GVS are 1) the slight increase of the 2DEG concentration due to the decreased band gap in the InGaAsSb/GaAs QW [6], [12]- [15] and 2) the enhanced channel confinement capability due the increased channel/buffer discontinuities to suppress the substrate leakages at higher channel potentials [16]. Thus, a more negative gate bias was required to deplete the carriers in the InGaAsSb channel.…”

“…The InGaAsN/GaAs heterostructures possess the advantages of improving electron confinement at high temperatures due to their high conductionband discontinuity barriers. In x Ga 1−x As 1−y N y , which may be strained or lattice-matched to the GaAs substrate, has been applied to 1.3-µm laser diodes [4]- [6]. Besides, InGaAsNbased heterojunction bipolar transistors (HBTs) [7]- [9] have also demonstrated significant reductions in the turn-on voltages Manuscript as compared to the AlGaAs-based HBTs.…”

“…Consequently, the N incorporation would seriously degrade the carrier transport [10], [11] for electronic device applications. In order to improve the optical property, annealing processes were attempted to remove the defects or the nonradiative impurities [6], [12], [13]. Recently, some efforts have been devoted to using Sb atoms as surfactants in the GaAs/InGaAsNSb quantum well (QW) laser to improve the crystal quality and to suppress 3-D growth [14]- [18].…”

Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

“…Long-wavelength, 1.2 -1.3 mm laser diodes with In x Ga 1Àx As 1Ày N y or InGaAsNSb compounds grown on the GaAs substrates have attracted great interest. [3][4][5] InGaAsN-based heterojunction bipolar transistors (HBTs) [6][7][8] have also demonstrated significant reductions in the turn-on voltage compared with AlGaAs-based HBTs. Although the incorporation of nitrogen atoms into InGaAs compounds can reduce the energy band gap, so far this has usually resulted in poor crystal quality crystals.…”