A Novel Dilute Antimony Channel $\hbox{In}_{0.2}\hbox{Ga}_{0.8}\hbox{AsSb}/\hbox{GaAs}$ HEMT

Abstract

This letter reports, for the first time, a highelectron mobility transistor (HEMT) using a dilute antimony In 0.2 Ga 0.8 AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance g m,max of 227 (180) mS/mm, a drain saturation current density I DSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f T of 25 (20.6) GHz, and the maximum oscillation frequency f max of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 µm 2 .

Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

“…The inset of figure 3 shows the TEM pictures for the proposed In 0.2 Ga 0.8 AsSb/GaAs DCFET. The In 0.2 Ga 0.8 AsSb/GaAs heterointerfaces were observed to be more flat and uniform than those in the conventional InGaAs/GaAs sample [19]. The TEM photos and SdH characterizations have clearly verified the improved crystalline quality and enhanced electron confinement capability after the incorporation of surfactant-like Sb atoms into the InGaAs channel.…”

Transparent AZO-Gated Double δ-Doped AlGaAs/InGaAs HEMTs

“…Tremendous efforts on exploring new high-electronmobility transistor (HEMT) designs [1][2][3][4] have been made during the last few decades. Different from using the opaque metal gates [5][6], Pei et al [7] has lately demonstrated an AlGaN/GaN HEMT with an ITO gate to improve the transparence of the gate electrode.…”

Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures

“…13,14 Thermal annealing was attempted in order to remove defects or nonradiative impurities and improve the luminescence efficiency. 15,16 In addition, HEMTs consisting of Sb-doped dilutechannel designs 17,18 were studied to demonstrate improved carrier transport and high-linearity gain characteristics, since doping Sb atoms can reduce the bandgap and smooth out the heterointerface at the same time.…”