Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

Hua, Bin; Motohisa, Junichi; Kobayashi, Yasunori; Hara, Shinjiro; Fukui, Takashi

doi:10.1021/nl802636b

Cited by 259 publications

(245 citation statements)

References 23 publications

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“…Far above the threshold, the output from the single mode at 1.496 eV is several orders of magnitude stronger than the spontaneous emission background, and evolves linearly with the pump power density as expected. In previous studies of GaAs/GaAsP core-shell NWs 17 , strong 'gain-pinning' effects, indicative of local heating by the excitation laser are evident in the results of ref. 17 where a transition to an output saturation was observed after only a modest (approximately sixfold) enhancement of the emission intensity.…”

Section: Resultsmentioning

confidence: 76%

“…In previous studies of GaAs/GaAsP core-shell NWs 17 , strong 'gain-pinning' effects, indicative of local heating by the excitation laser are evident in the results of ref. 17 where a transition to an output saturation was observed after only a modest (approximately sixfold) enhancement of the emission intensity. In contrast, the results presented in Fig.…”

Section: Resultsmentioning

confidence: 76%

“…To date, lasing from NWs has been demonstrated using a range of different material systems that span the ultraviolet and visible regions of the spectrum. This includes ZnO 10 , group-III nitrides 11 , II/VI materials 12 and, most recently, III/V NWs [13][14][15][16][17] . Very recently, infrared lasing has been observed at low temperature using InGaAs nanoneedles grown epitaxially directly on silicon 14 and silicon metal oxide semiconductor field-effect transistors 15 by exploiting whispering gallery-like optical modes.…”

mentioning

confidence: 99%

“…Very recently, infrared lasing has been observed at low temperature using InGaAs nanoneedles grown epitaxially directly on silicon 14 and silicon metal oxide semiconductor field-effect transistors 15 by exploiting whispering gallery-like optical modes. Furthermore, first indications of amplified spontaneous emission and lasing have been reported from optically pumped GaSb 16 and GaAsGaAsP core-shell NWs 17 . For NW lasers that use GaAs as a gain medium, theoretical analyses of the modal gain 13,18,19 have indicated that continuous wave lasing should be possible in detached NWs.…”

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confidence: 99%

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Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

et al. 2013

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Semiconductor nanowires are widely considered to be the next frontier in the drive towards ultra-small, highly efficient coherent light sources. While NW lasers in the visible and ultraviolet have been widely demonstrated, the major role of surface and Auger recombination has hindered their development in the near infrared. Here we report infrared lasing up to room temperature from individual core-shell GaAs-AlGaAs nanowires. When subject to pulsed optical excitation, NWs exhibit lasing, characterized by single-mode emission at 10 K with a linewidth o60 GHz. The major role of non-radiative surface recombination is obviated by the presence of an AlGaAs shell around the GaAs-active region. Remarkably low threshold pump power densities down to B760 W cm À 2 are observed at 10 K, with a characteristic temperature of T 0 ¼ 109 ± 12 K and lasing operation up to room temperature. Our results show that, by carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors.

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 76%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

et al. 2013

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“…1,2 Based on these nanowires, functional nanodevices, such as field effect transistors, [3][4][5] optoelectronic detectors, [6][7][8] solar cells, 9,10 light-emitting diodes, [11][12][13] and gas sensors, 14,15 have been designed and fabricated. These III-V semiconductor nanowires, especially those with narrow band gaps, have also been used to construct hybrid quantum structures for the study of novel physics phenomena such as Majorana bound states in topological superconducting systems.…”

Section: Introductionmentioning

confidence: 99%

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Xing

2016

AIP Advances

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Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

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Low‐Dimensional Semiconductor Material‐Based Optoelectronic Devices and Their Applications

Retamal

2022

Digital Encyclopedia of Applied Physics

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Over the past three decades, bottom‐up low‐dimensional semiconductor materials became a high class of materials owing to their superior electronic and optical properties than their bulk counterparts. Accordingly, semiconducting nanostructures have gained a great deal of attention as building blocks for multifunctional optoelectronic devices that control all aspects of light, ranging from absorption, propagation, emission to modulation. Therefore, the article gives a comprehensive review of the intriguing properties of distinct nanostructured semiconducting materials ranging from silicon, III–V compounds, metal oxides, halide perovskites, carbon nanotubes to two‐dimensional (2D) transitional metal dichalcogenides. More specifically, we explore the size dependence, quantum‐confinement effects, structural phase, material composition, surface effects, high surface‐to‐volume ratio, radial or axial structures, 2D in‐plane and out‐of‐plane structures, junction type, energy band alignment, and graded refractive index profile, among others. Accordingly, we next look on how to exploit such properties to build high‐performance optoelectronic devices such as solar cells, photodetectors, waveguides, LEDs, and lasers. Special emphasis is given to nanowire‐based plasmonic lasers for their ability to deliver subwavelength coherent light at the nanoscale. Finally, we survey a large number of applications to display the great potential of semiconducting nanostructures toward the next generation of photonic‐integrated circuits and quantum devices.

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Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

Cited by 259 publications

References 23 publications

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Low‐Dimensional Semiconductor Material‐Based Optoelectronic Devices and Their Applications

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