Single G centers in silicon fabricated by co-implantation with carbon and proton

Baron, Yoann; Durand, A.; Herzig, Tobias; Khoury, Michel; Pezzagna, Sébastien; Meijer, Jan; Robert-Philip, I.; Abbarchi, Marco; Hartmann, Jean‐Michel; Reboh, S.; Gérard, Jean‐Michel; Jacques, Vincent; Cassabois, Guillaume; Dréau, A.

doi:10.1063/5.0097407

Cited by 17 publications

(21 citation statements)

References 22 publications

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“…It can be explained by the delocalised nature of the excitonic excited state, so the similar hole spin density governs the interaction as for the positively charged defect. We find good agreement for the calculated positively charged defect 13 C hyperfine parameters of A xx = 5.9 MHz, A yy = 5.2 MHz and A zz = 153.9 MHz with the reported values of the Si-G15 EPR centre 27 1a].…”

Section: Spin Propertiessupporting

confidence: 82%

“…at 13 C, 17 O, and 29 Si isotopes surrounding the defect (see Supplementary Note 2). We conclude that the hyperfine interaction in the neutral triplet excited state of the defect is very similar to that of the positive doublet ground state, only incorporating a scaling factor of 2 of the two spin quantum numbers in the neutral and positive charge states.…”

Section: Spin Propertiesmentioning

confidence: 99%

“…1b]. Alternatively, a weak magnetic field perpendicular to the nuclear spin quantisation axis (set by A zz ) and a resonant microwave excitation pulse can also be utilised to map the electron spin superposition onto the nuclear spin as demonstrated for NV centre and a single 13 C in diamond in ref. 50 .…”

Section: Quantum Protocolsmentioning

confidence: 99%

“…These characteristics of the host material enable the improvement of optical and spin properties of the quantum defects. Recent experimental advances allowed for the isolation of single quantum emitters in this material, such as G-, W-and T-centres, with a great promise for quantum communication [6][7][8][9][10][11][12][13][14][15][16][17] . However, to further reduce the transmission losses in optical fibres, it is essential to find an active defect with the emission wavelength in either the L-or the C-band and an optically addressable spin state.…”

Section: Introductionmentioning

confidence: 99%

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An L-band emitter with quantum memory in silicon

et al. 2022

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Fluorescent centres in silicon have recently attracted great interest, owing to their remarkable properties for quantum technology. Here, we demonstrate that the C-centre in silicon can realise an optically readable quantum register in the L-band wavelength region where the transmission losses in commercial optical fibres are minimal. Our in-depth theoretical characterisation confirms the assignment of the C-centre to the carbon-oxygen interstitial pair defect. We further explore its magneto-optical properties, such as hyperfine and spin-orbit coupling constants from first principles calculations, which are crucial for tight control of the quantum states of the triplet electron spin. Based on this data, we set up quantum optics protocols to initialise and read out the quantum states of the electron spin, and realise a quantum memory by transferring quantum information from the electron spin to proximate 29Si nuclear spins. Our findings establish an optically readable long-living quantum memory in silicon where the scalability of qubits may be achieved by CMOS-compatible technology.

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Section: Spin Propertiessupporting

confidence: 82%

Section: Spin Propertiesmentioning

confidence: 99%

Section: Quantum Protocolsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An L-band emitter with quantum memory in silicon

et al. 2022

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“…A promising alternative route exploits the integration of isolated atoms into the photonic chip, such as erbium ions or isolated defects acting as artificial atoms. − By embedding one such emitter in a SOI cavity, one expects to tailor its spontaneous emission (SE) thanks to cavity quantum electrodynamics (CQED) effects and to control the single-photon generation process . Concerning color centers in Si, particular attention has been devoted to the G and T centers so far. − Ensembles of G centers have been integrated in a metasurface, micropillars, and Mie resonators to improve light extraction out of silicon, − and efficient collection of single photons has been reported for a T center in a nanobeam . Cavity enhancement of the zero-phonon emission has been demonstrated for an ensemble of G centers in a microring cavity and in a 2D photonic crystal (PhC) cavity for a single G center .…”

Section: Introductionmentioning

confidence: 99%

Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities

Lefaucher,

Jager,

Calvo

et al. 2023

ACS Photonics

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Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon triinterstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement (F p = 12.5) and efficient luminescence extraction (η coll = 40% for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a 2-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of 65 ± 10% for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of ondemand sources of single photons by harnessing cavity quantum electrodynamics in silicon photonic chips.

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Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Ristori,

Khoury,

Salvalaglio

et al. 2023

Advanced Optical Materials

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Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.

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Single G centers in silicon fabricated by co-implantation with carbon and proton

Cited by 17 publications

References 22 publications

An L-band emitter with quantum memory in silicon

An L-band emitter with quantum memory in silicon

Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

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