Single Event Upset Detection and Hardening schemes for CNTFET SRAM – A Review

Abstract

Carbon nanotubes (CNT) provide a better alternative of silicon, when it comes to nano scales. Thanks to its high stability and high performance of carbon nanotube, CNT based FET (CNTFET) devices which are gaining popularity of late. Single Event Upset (SEU) in a device is caused due to radiation. Radiation can be through two ways, one due to charge particles present in the atmosphere and other due to alpha particles. In this article we review some of the detection and hardening schemes in CMOS SRAM and make related simulations on CNTFET SRAM. The aim of this paper is to present the challenges the CNTFET SRAM is facing when the radiation effects are introduced. A full experimentation of all the schemes of detection and correction schemes will be beyond the scope, so only certain experiments that can be well carried out with CNTFET SRAM memory is more focussed.

A New Quaternary Full Adder Cell based on CNFET for Use in Fast Arithmetic Circuits

“…These transistors have higher scalability than SB transistors, and have much higher currents due to the lack of a Schottky fence when they are on. [23][24][25][26]…”