Single-event-upset and alpha-particle emission rate measurement techniques

Gordon, Michael S.; Rodbell, K. P.; Heidel, D.; Cabral, C.; Cannon, Ethan H.; Reinhardt, D.D.

doi:10.1147/rd.523.0265

Cited by 17 publications

(12 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Effects of alpha-particle emission from hot underfill materials can be simulated. Experimental aspects of SEU issues resulting from underfill materials are described in another paper in this issue [8], and examples of BEOL simulations also can be found elsewhere in this issue [9].…”

Section: Particle Source Generators and Simulation Optionsmentioning

confidence: 99%

“…In general, there are two classes of nuclear events: inelastic scattering and elastic scattering. 8 The inelastic processes are simulated by the NUSPA reaction model [5][6][7], and the elastic processes are simulated by nuclear optical models [12]. NUSPA is a standalone nuclear reaction model that is used to generate a nuclear database consisting of reaction 4 A hadron is a strongly interacting subatomic particle.…”

Section: Cosmic Ray and Other Sourcesmentioning

confidence: 99%

“…It is a parameter that is derived from a broad ion beam [9,10]. 8 In an inelastic scattering event, the internal states of the projectile, the target, or both are changed. In an elastic scattering event, the internal states of the projectile and target remain unchanged.…”

Section: Cosmic Ray and Other Sourcesmentioning

confidence: 99%

See 2 more Smart Citations

SEMM-2: A new generation of single-event-effect modeling tools

Tang

2008

IBM J. Res. & Dev.

View full text Add to dashboard Cite

The IBM soft-error Monte Carlo model SEMM-2 is a new general-purpose simulation platform developed for single-eventeffect (SEE) analysis of advanced CMOS (complementary metaloxide semiconductor) technologies. The current status and major features of this system are presented in this paper, including the physics model modules for the relevant atomic and nuclear processes, the construction and application of databases, and the simulation methodologies used to solve general transport problems. SEE analysis can be carried out for a large class of radiation subatomic particles in arbitrarily complex geometries and material composition of the integrated circuit designs.

show abstract

Section: Particle Source Generators and Simulation Optionsmentioning

confidence: 99%

Section: Cosmic Ray and Other Sourcesmentioning

confidence: 99%

See 1 more Smart Citation

SEMM-2: A new generation of single-event-effect modeling tools

Tang

2008

IBM J. Res. & Dev.

View full text Add to dashboard Cite

show abstract

“…As a particle passes through layers of 3D chip, its energy loss per unit path length can be quantified by the linear energy transfer ( LET ) metric [19]. Therefore, the total amount of energy used for charge generation can be expressed by Eq-2, where deposite E is the energy deposited by a striking particle traveling a distance of s , and ρ is the density of the material.…”

Section: 1mentioning

confidence: 99%

Microarchitecture soft error vulnerability characterization and mitigation under 3D integration technology

Zhang

2008

2008 41st IEEE/ACM International Symposium on Microarchitecture

View full text Add to dashboard Cite

As semiconductor processing techniques continue to scale down, transient faults, also known as soft errors, are increasingly becoming a reliability threat to high-performance microprocessors fabricated using state-of-the-art CMOS technologies. Emerging 3D chip integration techniques leverage vertically stacked structures to reduce on-chip wire delay and have shown the capability of overcoming interconnect bottlenecks as well as reducing power consumption. While the benefits of 3D die stacking on microprocessor performance and power have been extensively investigated recently, its implication on transient fault susceptibility is largely unknown. In this work, we make the first attempt to characterize microarchitecture soft error vulnerabilities across the stacked chip layers under 3D integration technologies. Using models and simulations that capture soft error physical mechanism and circuit/architecture level impact, our study reveals the opportunities of leveraging 3D integration (e.g. the structure of vertical stacking and the incorporation of heterogeneous process technologies) to achieve enhanced reliability. We showcase that the first characteristic allows outer-layers to shield inter-layers from particle strikes and the second feature enables the deployment of error resilience device techniques (e.g. Silicon-On-Insulator) on vulnerable layers to achieve a reliability target while minimizing manufacturing cost. We further propose a set of microarchitecture techniques which can effectively exploit the reliability benefits offered by 3D technologies. For example, we propose the scheduling of vulnerable in-flight instructions to reliable layers and design robust register files by combing reliability-hardened circuits, program value vulnerability and 3D integration techniques. Experimental results show that these techniques are able to substantially reduce 3D microarchitectures' soft error rate by up to 88% compared to a planar design. We further evaluate the thermal implication of the proposed techniques and conclude that their impact on chip temperature is negligible.

show abstract

“…[45] A importância do estudo da respostaà radiação em transistores bipolar e MOS (Metal Oxide Semicondutor ) se dá devido a grande utilização desses componentes em praticamente qualquer dispositivo eletrônico. O transistor bipolar descrito no capítulo 4, queé o transistor mais simples possível, mas essencial como amplificador operacional, circuito comparador, reguladores de tensão e outras aplicações de leitura e envio de informações analógicas.…”

Section: Semicondutores Em Ambientes De Radiaçãounclassified

Estudo sobre distribuição de cargas em semicondutores sujeitos a radiação ionizante

Aguirre¹

View full text Add to dashboard Cite

ResumoOs efeitos da radiação ionizante em dispositivos eletrônicosé uma preocupação crescente na tecnologia de semicondutores, especialmente devidoà contínua redução dos dispositivos e ainda maior, quando são destinados para uso em ambientes agressivos com alta radiação, tais como missões espaciais, aceleradores de partículas ou reatores nucleares. Dentre os vários efeitos causados pela radiação ionizante em dispositivos eletrônicos está aquele devidoà Dose Acumulada (Total Ionizing Dose -TID), o qual a acumulação de danos de radiação no dispositivo muda seu funcionamento normal. O TID causado por fótons em transístores já foi estudado no Brasil, mas o efeito de prótons num transistor bipolar, apresentado neste trabalhoé um trabalho pioneiro no país. As curvas característi-cas de um transistor 2N3733 foram medidas antes, durante e após a irradiação de prótons entre 1,5 e 3,8 MeV, para quantificar as alterações das especificações elétricas do dispositivo. Nestas energias, há uma correlação direta entre a mudança na resposta elétrica e a energia do próton, exceto em algumas energias específicas, onde o pico de Bragg ocorreu perto das junções ou no meio do cristal de silício, demonstrando a importância da correta caracterização da camada de passivação em estudos de TID em dispositivos eletrônicos.A recuperação dos transistores irradiados após o recozimento a 50°C durante 8 horas também foi maior para aqueles irradiados nessas energias. Existe um limite superior de dose para o qual não foi observada alteração significativa do transistor. Este limite, da ordem de Grad, excede a maioria das aplicações em ambientes terrestres, mas está dentro do intervalo esperado para missões espaciais a Júpiter ou em grandes aceleradores de partículas.Palavras chave: Radiação, Semicondutor, Dose Acumulada, Transistor Bipolar, Dose, Single Event Effect, Total Irradiation Dose AbstractThe effect of ionizing radiation on electronic devices is a growing concern in semiconductor technology, especially due to the continuous reduction of the devices and even greater when they are intended for use in aggressive environments with high radiation, such as space missions, particle accelerators or nuclear reactors. Among the various effects caused by ionizing radiation on electronic devices are the effects due to Total Ionizing Dose (TID), in which the accumulation of radiation damage in the device changes its normal functioning. The TID caused by photons has already been studied in Brazil, but the effect of protons on a bipolar transistor, presented in this work is a pioneer work in the country. The characteristic curves of a 2N3733 transistor were measured before, during and after proton irradiation between 1.5 and 3.8 MeV, to quantify changes of the electrical specifications of the device. At these proton energies, there is a direct correlation between the change in the electric response to the proton energy, except at some specific energies where the Bragg peak occurred near the junctions or in the middle of the silicon crystal, demonstrating...

show abstract

Single-event-upset and alpha-particle emission rate measurement techniques

Cited by 17 publications

References 12 publications

SEMM-2: A new generation of single-event-effect modeling tools

SEMM-2: A new generation of single-event-effect modeling tools

Microarchitecture soft error vulnerability characterization and mitigation under 3D integration technology

Estudo sobre distribuição de cargas em semicondutores sujeitos a radiação ionizante

Contact Info

Product

Resources

About