SEMM-2: A new generation of single-event-effect modeling tools

Tang, H.H.K.

doi:10.1147/rd.523.0233

Cited by 30 publications

(17 citation statements)

References 36 publications

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“…Our alpha SEU simulations are performed with SEMM-2 [11]. In these simulations we have used layouts of realistic BEOL design structures for inputs.…”

Section: Simulation Setups For Alpha-induced Seumentioning

confidence: 99%

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

Tang

Murray

Fiorenza

et al. 2009

IEEE Trans. Nucl. Sci.

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Novel techniques have been applied to model realistic alpha particle source distributions in complex back-end-of-the-line geometries. Rigorous Monte Carlo simulations with high resolution have been performed to analyze the charge collection in 45 nm SOI test devices. These studies reveal soft fail sensitivity to the topologies of the alpha particle source and the BEOL structure. Index Terms-Alpha particle-induced soft errors, CMOS technology, radiation effects in SRAM circuits, silicon on insulator technology, single event upsets.

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“…Our alpha SEU simulations are performed with SEMM-2 [11]. In these simulations we have used layouts of realistic BEOL design structures for inputs.…”

Section: Simulation Setups For Alpha-induced Seumentioning

confidence: 99%

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

Tang

Murray

Fiorenza

et al. 2009

IEEE Trans. Nucl. Sci.

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“…For a longer treatment of modeling from a decade ago as well as an extensive list of references, see Reference [12]. For a contemporary view, see References [13][14][15].…”

Section: Dram Ser Mitigation Techniquesmentioning

confidence: 99%

System RAS implications of DRAM soft errors

Dell¹

2008

IBM J. Res. & Dev.

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While attention in the realm of computer design has shifted away from the classic DRAM soft-error rate (SER) and focused instead on SRAM and microprocessor latch sensitivities as sources of potential errors, DRAM SER nonetheless remains a challenging problem. This is true even though both cosmic ray-induced and alpha-particle-induced DRAM soft errors have been well modeled and, to a certain degree, well understood. However, the oftenoverlooked alignment of a DRAM hard error and a random soft error can have major reliability, availability, and serviceability (RAS) implications for systems that require an extremely long mean time between failures. The net of this effect is that what appears to be a well-behaved, single-bit soft error ends up overwhelming a seemingly state-of-the-art mitigation technique. This paper describes some of the history of DRAM soft-error discovery and the subsequent development of mitigation strategies. It then examines some architectural considerations that can exacerbate the effect of DRAM soft errors and may have systemlevel implications for today's standard fault-tolerance schemes.

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“…(Republished from [10] Metal fraction extraction method: From design layout to complex BEOL simulations In a first attempt to solve BEOL particle transport problems, a standalone three-dimensional (3D) Monte Carlo heavy-ion charge deposition simulation module MCHIDQ was written to test the numerical robustness of the basic transport algorithms and to compute estimates of SEU rates. This module serves as a generic building block of the particle transport simulators and radiation event generators [7]. The basic problem of treating realistic BEOL geometries is solved by using a metal fraction extraction method, which is described in [15].…”

Section: Figurementioning

confidence: 99%

“…In order to analyze and accurately predict the potential SEU problems in advanced CMOS (complementary metal-oxide semiconductor) technologies, development of a new SEU simulation system SEMM-2 began in about 2001, the status of which is reviewed in another paper in this issue [7]. Because of the aggressive scaling in feature size, the typical Q crit is less than or equal to a few femtocoulombs.…”

Section: Introductionmentioning

confidence: 99%

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New simulation methodology for effects of radiation in semiconductor chip structures

et al. 2008

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New and effective modeling methodologies have been developed to simulate particle transport in arbitrarily complex back-end-ofline (BEOL) topologies of a semiconductor chip. They are applied to address a number of critical problems that involve the singleevent-effect analysis of new device structures for 65-nm CMOS (complementary metal-oxide semiconductor) technologies and beyond. These new simulation techniques also provide a generic building block on which a new version of the IBM soft-error Monte Carlo model (SEMM-2) is constructed. In this paper, we review the basic concepts of this development and discuss some important applications.

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SEMM-2: A new generation of single-event-effect modeling tools

Cited by 30 publications

References 36 publications

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

System RAS implications of DRAM soft errors

New simulation methodology for effects of radiation in semiconductor chip structures

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