Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

Abstract

In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors (SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional (3D) simulation model is established, the single event effect (SEE) simulation is further carried out on the basis of SiGe HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient (SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate (C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

“…Thus, the front packages of all samples are decaped before the experiment. Referring to the SEE sensitive volume of the SiGe HBT obtained in our previous work, [15] a position outside the edge of the interdigital electrode is selected as the 108501-2 point of laser striking, so that the SET signals can be captured, and was not affected by metal wiring. In the above section, we know the substrate did not have a separate electrode in the SiGe HBT.…”

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

“…The epitaxial base uses boron doping of 1×10 19 cm −3 . Thirdly, the arsenic doping of collector uses gaussian distribution which the maximum is 1×10 18 cm −3 at the center and the minimum is 6×10 15 cm −3 at the boundaries of the base region. The substrate is uniformly doped boron about 6×10 14 cm −3 .…”

“…[14][15][16] These phenomena are caused by the funneling potential disturbance at the large C/S junction and in consequence the C/S junction is regarded as the sensitive volume of the SiGe HBT. In addition, through the microbeam laser experiment [17] and TCAD simulation, [18] the area of the C/S junction is inferred to be related to the SEEs of the SiGe HBT. Thus, five kinds of C/S junction sizes of 18 µm×20 µm, 16 µm×19 µm, 14 µm×18 µm, 12 µm×17 µm, and 10 µm×16 µm are selected for the device structure in the SEE simulation.…”

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

“…5, it is difficult to directly determine the equivalent circuit according to Eqs. ( 8) and (9). It is necessary to approximate the exponential term e ±γd using the Taylor series.…”

“…Owing to its special base structure, SiGe HBTs show a built-in multi-Mrad total dose hardness with no intentional hardening. [8][9][10] However, single-event effects (SEE) re-main a serious problem, with recent results demonstrating a low linear energy-transfer threshold and high saturated crosssections. [11][12][13][14] A reduction in the sensitive area enclosed by deep trench isolation is considered an effective method of improving the net upset cross section.…”