Single Event Phenomena I

Messenger, George C.; Ash, Milton S.

doi:10.1007/978-1-4615-6043-2_6

Cited by 6 publications

(6 citation statements)

References 32 publications

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“…It is a consequence of hot electron effects during the stress, which induce both defects and recombination processes. This layer, assimilated to a defect layer, can be characterized by an apparent doping value N DL lower than N a [13,14]. It spreads in the p-region (figure 5) according to the stress time.…”

Section: Discussionmentioning

confidence: 99%

New modelling method for forward junctionI-Vanalysis

El-Tahchi

Toufik

Pelanchon

et al. 2002

J. Phys. D: Appl. Phys.

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This work presents a theoretical calculation of the I-V characteristics of an n-p junction. The total current across the n-p junction is presented as the superposition of currents due to each region of the junction. It results in ideality factor values between 1 and 2. Threshold voltage values, related to the low and high level injection in each region, are introduced. The theoretical model is used to describe the experimental emitter-base I-V characteristics of a bipolar transistor. The effects of the electrical ageing are taken into account as a creation of a defect layer in the base, near the junction. A maximum error of 6% between the theoretical model and experiment is obtained.

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Section: Discussionmentioning

confidence: 99%

New modelling method for forward junctionI-Vanalysis

El-Tahchi

Toufik

Pelanchon

et al. 2002

J. Phys. D: Appl. Phys.

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“…For deep defects resulting from primary defects mostly created by cascading-displacement processes, the term γ dis may result to be slightly 47 (if at all) dependent on the type of incoming particles. 45 Below 2-3 cm [218], for n-type silicon K τ,n is (1.0-1.6) × 10 5 s cm −2 and for p-type silicon K τ,n (1.5-3.0) × 10 5 s cm −2 . 46 For high-resistivity silicon (see discussion in section 4.5), it was found that there are secondary defects whose concentrations are not linearly dependent on fluence.…”

Section: Minority Carrier Lifetime and Displacement Damagementioning

confidence: 94%

“…This knowledge has to be complemented by investigations of possible latch up and single event upset (e.g. see [45]) for an effective implementation of any VLSI circuit, whose design can, in turn, depend on the radiation response (e.g. see sections 3.3.2 and 6.2).…”

Section: Space Radiation Environmentmentioning

confidence: 99%

“…Furthermore, the damage constant K τ,n was extensively investigated for fast-neutron fluences (typically) up to 10 11 -10 12 n cm −2 (e.g. see section 5 in chapter I of part II of [1], section 5.9 of [3], [218,219] and references therein) and determined values 45 are available in literature. For n-and p-type silicon, K τ,n is almost independent of the silicon resistivity (below a few cm).…”

Section: Minority Carrier Lifetime and Displacement Damagementioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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“…In particular, interaction with individual particles can disrupt the function of a device through spurious charge generation, sometimes also leading to permanent failure through a range of indirect mechanisms including latch-up. These effects are termed "single event" effects (SEEs) as each results stochastically from a single interaction between a device and an ionising particle, rather than occurring as the cumulative effect of many interactions [1]. Neutrons, although not directly ionising, induce SEEs through nuclear interactions with constituent ions of the semiconductor lattice.Technology trends in electronic systems and components are leading to greater susceptibility to single event effects [2].…”

mentioning

confidence: 99%

Development and application of a neutron sensor for single event effects analysis

Platt

Cassels

Torok

2005

J. Phys.: Conf. Ser.

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The development and application of a charge-coupled device (CCD) sensor for neutron detection is described. The sensor provides images of neutron-induced single-event effects (SEEs) at 9 µm pixel resolution and a charge/pixel resolution of typically 36.6 electronic charges. Example results are presented, showing the charge profiles resulting from single events observed during tests in a representative neutron spectrum. The sensor enables aspects of SEE phenomena to be studied directly in more detail than hitherto. Single event effects in electronicsInteractions between semiconductor electronic devices and energetic subatomic particles, such as neutrons, can adversely affect device performance in several ways. In particular, interaction with individual particles can disrupt the function of a device through spurious charge generation, sometimes also leading to permanent failure through a range of indirect mechanisms including latch-up. These effects are termed "single event" effects (SEEs) as each results stochastically from a single interaction between a device and an ionising particle, rather than occurring as the cumulative effect of many interactions [1]. Neutrons, although not directly ionising, induce SEEs through nuclear interactions with constituent ions of the semiconductor lattice.Technology trends in electronic systems and components are leading to greater susceptibility to single event effects [2]. Smaller device structures, lower operating voltages, and higher clock speeds result in a greater likelihood of device disruption by SEEs, especially in environments where the radiation environment is hostile. One such environment is the atmosphere at altitude, where a damaging neutron flux, arising from the effects of cosmic radiation, is found [3]. As a result, neutroninduced SEEs are of particular concern in avionic applications [4]. To ensure reliability, ground testing of avionic components is routinely undertaken at neutron test facilities such as the Tri-University Meson Facility (TRIUMF), located at the University of British Columbia, Vancouver [5]. This facility provides a simulation of the atmospheric neutron spectrum with neutron flux approximately six orders of magnitude greater than that present at 40,000 ft, providing for accelerated testing of components.This paper describes development of an imaging neutron sensor using a charge-coupled device (CCD), and its use in detecting and analyzing SEEs occurring in the simulated atmospheric spectrum at TRIUMF. The sensor can be used to identify the characteristics of individual neutron interactions and is being used to predict the statistics of neutron-induced SEEs.

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Single Event Phenomena I

Cited by 6 publications

References 32 publications

New modelling method for forward junctionI-Vanalysis

New modelling method for forward junctionI-Vanalysis

Particle interaction and displacement damage in silicon devices operated in radiation environments

Development and application of a neutron sensor for single event effects analysis

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