New modelling method for forward junctionI-Vanalysis

Abstract

This work presents a theoretical calculation of the I-V characteristics of an n-p junction. The total current across the n-p junction is presented as the superposition of currents due to each region of the junction. It results in ideality factor values between 1 and 2. Threshold voltage values, related to the low and high level injection in each region, are introduced. The theoretical model is used to describe the experimental emitter-base I-V characteristics of a bipolar transistor. The effects of the electrical ageing are taken into account as a creation of a defect layer in the base, near the junction. A maximum error of 6% between the theoretical model and experiment is obtained.

High carrier injection for all-silicon laser

“…This degradation effect saturates since the ideality factor stabilizes at the value n = 2. It is indicating that high injection effects appear [23] at high voltage operations with minority carrier concentration of the order of majority carrier concentration.…”

“…The injection process was monitored by the analysis of the I(V ) curve with the classical exponential model [1,23].…”