Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons

Lambert, Damien; Desnoyers, Francois; Thouvenot, Didier; Azais, B.

doi:10.1109/redw.2014.7004592

Cited by 7 publications

(1 citation statement)

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“…Thermal neutrons, through the 10 B(n,α) reaction, can switch on the parasitic BJT of the MOSFET with subsequent SEB activation [8]; typically, 10 B is present in the dopant of the p-body region of the silicon n-channel power MOSFETs and BPSG (borophosphosilicate glass) passivation layer. To the best of our knowledge, few studies are dedicated to the tests of power devices under thermal neutrons [9].…”

Section: Introductionmentioning

confidence: 99%

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

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Altieri

Abbene

et al. 2020

Sensors

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Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr with ultra-fast neutrons (1-800 MeV) were evaluated in terms of failure in time (FIT) versus derating voltage curves according to the JEP151 procedure of the Joint Electron Device Engineering Council (JEDEC). These curves, even if scaled with die size and avalanche voltage, were strongly linked to the technological processes of the devices, although a common trend was observed that highlighted commonalities among the failures of different types of MOSFETs. In both experiments, we observed only SEB failures without single-event gate rupture (SEGR) during the tests. None of the power devices that survived the neutron tests were degraded in their electrical performances. A study of the worst-case bias condition (gate and/or drain) during irradiation was performed.

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Section: Introductionmentioning

confidence: 99%