Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons

Akturk, Akin; Wilkins, R.; McGarrity, J.M.; Gersey, Brad

doi:10.1109/tns.2016.2640945

Cited by 83 publications

(43 citation statements)

References 18 publications

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“…Single-event burnout (SEB) has also been observed in SiC diodes using pulsed-lasers [5] and high energy protons have been shown to induce both SEB [6] and breakdown due to displacement damage [7]. Both SiC diodes and MOSFETs may experience SEB in the presence of highenergy neutrons [8], [9]. Single event leakage current degradation is also a problem in Schottky diodes in silicon [10] and gallium nitride (GaN) [11], [12] when exposed to heavy-ions.…”

mentioning

confidence: 99%

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Johnson

Javanainen

Raman

et al. 2020

IEEE Trans. Nucl. Sci.

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Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; Raman, A.; Chakraborty, P. S. et al. (2020). Unifying Concepts for Ion-Induced LeakageAbstract-The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.

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mentioning

confidence: 99%

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Johnson

Javanainen

Raman

et al. 2020

IEEE Trans. Nucl. Sci.

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“…However, for spaceborne electronics, the natural space radiation environment must be factored into the reliability considerations. We also note that these devices are susceptible to burnout due to terrestrial neutrons and their terrestrial radiation reliability has been evaluated by Lichtenwalner et al [6] and Akturk et al [8].…”

Section: Brief Review Of Sic Mosfet Electrical Reliabilitymentioning

confidence: 80%

Failure Estimates for SiC Power MOSFETs in Space Electronics

et al. 2018

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Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.

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“…Fast and ultra-fast neutrons can cause different failure mechanisms in power MOSFETs and IGBTs. The most common failure mechanisms are SEB and single-event gate rupture (SEGR) [8,[10][11][12][13][14][15]. Neutron lattice collisions produce recoil atoms or spallation products that create electron-hole pairs along its trajectory through the lattice.…”

Section: Introductionmentioning

confidence: 99%

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

Principato

Altieri

Abbene

et al. 2020

Sensors

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Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr with ultra-fast neutrons (1-800 MeV) were evaluated in terms of failure in time (FIT) versus derating voltage curves according to the JEP151 procedure of the Joint Electron Device Engineering Council (JEDEC). These curves, even if scaled with die size and avalanche voltage, were strongly linked to the technological processes of the devices, although a common trend was observed that highlighted commonalities among the failures of different types of MOSFETs. In both experiments, we observed only SEB failures without single-event gate rupture (SEGR) during the tests. None of the power devices that survived the neutron tests were degraded in their electrical performances. A study of the worst-case bias condition (gate and/or drain) during irradiation was performed.

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Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons

Cited by 83 publications

References 18 publications

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Failure Estimates for SiC Power MOSFETs in Space Electronics

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

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