Single Event Effects in Carbon Nanotube-Based Field Effect Transistors Under Energetic Particle Radiation

Bushmaker, Adam; Walker, Don; Mann, Colin J.; Oklejas, Vanessa; Hopkins, Alan R.; Amer, Moh. R.; Cronin, Stephen B.

doi:10.1109/tns.2014.2367519

Cited by 9 publications

(14 citation statements)

References 37 publications

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“…Equally important is the demonstration of a new single-ion/CNT-based 1D heterostructure, with novel electronic properties such as resonant tunnelling and single-electron bound states. In addition, the response of nano-electronic devices to ionized gasses has implications for microelectronic devices operating while being exposed to ionizing radiation, as, for instance, in the space radiation environment 37 38 . The effects observed here raise the prospect of sensitive gas detectors with short exposure times and miniscule detection limits operating at room temperature with almost complete noise immunity.…”

Section: Discussionmentioning

confidence: 99%

Single-ion adsorption and switching in carbon nanotubes

et al. 2016

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Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes, by the mechanism of ion potential-induced carrier depletion, which is supported by density functional and Landauer transport theory. Our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.

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Section: Discussionmentioning

confidence: 99%

Single-ion adsorption and switching in carbon nanotubes

et al. 2016

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“…Time steps to integrate the RT-TDDFT equations are chosen adaptively between 0.005 and 5 attoseconds for K ranging from 10 eV to 10 MeV, which assure the convergence of simulation results. The bias voltage for all calculations is set to 0.05 V, which is of the same magnitude applied in experiments 7 and previous RT-TDDFT simulations 22,24 .…”

Section: Resultsmentioning

confidence: 99%

“…For example, the passage of an ion through a field-effect transistor (FET) induces a current transient. Recent protonradiation experiments on carbon nanotube (CNT) FETs show major and minor SEE signals of ∼ 100 nA 7 . Unfortunately, previous studies on SEE rely on analytical models such as diffusion-drift equations 8 , where the parameters shift in response to irradiation 9 .…”

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confidence: 99%

Transient Current in Graphene Transistors Under Single- Proton Irradiation

Yam

2021

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Two-dimensional materials and their multilayers or heterostructures are promising candidates for optoelectronic devices. Their performance such as the transient current can be remarkably modified under irradiation since the atoms are extremely exposed. This effect, however, still lacks theoretical understanding. Using real-time time-dependent density functional theory extended to open systems for electrons and Ehrenfest dynamics for the moving ion, we explore the single-ion irradiation effects on graphene electronics. Perturbed electronic transport is identified in a field-effect transistor setup. The peak transient current is calculated as the key indicator to quantify the irradiation effects, the irradiation-energy dependence of which shows distinction from the stopping power that was well understood in recent studies. We find that the perturbation in transient current is driven by delocalized plasmonic excitation, in contrast to the localized electronic excitation that has a strong impact on the stopping power. The site dependence of transient current is determined by the local electron density and ionic charge, which highlights the roles of the lattice and electronic structures of materials. Following these understandings and the database developed for typical space-irradiation conditions, the device responses of graphene nanoelectronics can be modeled. These results and methods lay the ground for the material-informed design of nanoelectronics in, for example, space applications.

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“…Understanding these defects may therefore be a key step in developing nano-electronics for use in the space environment. Further details of this work are published elsewhere [63,64].…”

Section: Radiation Testing Of Carbon Nanotube Field Effect Transistormentioning

confidence: 99%

The 88-Inch Cyclotron: A one-stop facility for electronics radiation and detector testing

et al. 2018

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In outer space down to the altitudes routinely flown by larger aircrafts, radiation can pose serious issues for microelectronics circuits. The 88-Inch Cyclotron at Lawrence Berkeley National Laboratory is a sector-focused cyclotron and home of the Berkeley Accelerator Space Effects Facility, where the effects of energetic particles on sensitive microelectronics are studied with the goal of designing electronic systems for the space community. This paper describes the flexibility of the facility and its capabilities for testing the bombardment of electronics by heavy ions, light ions, and neutrons. Experimental capabilities for the generation of neutron beams from deuteron breakups and radiation testing of carbon nanotube field effect transistor will be discussed.

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Single Event Effects in Carbon Nanotube-Based Field Effect Transistors Under Energetic Particle Radiation

Cited by 9 publications

References 37 publications

Single-ion adsorption and switching in carbon nanotubes

Single-ion adsorption and switching in carbon nanotubes

Transient Current in Graphene Transistors Under Single- Proton Irradiation

The 88-Inch Cyclotron: A one-stop facility for electronics radiation and detector testing

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