We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

Thermal transport in carbon nanotubes is explored using different laser powers to heat suspended single-walled carbon nanotubes ∼5μm in length. The temperature change along the length of a nanotube is determined from the temperature-induced shifts in the G band Raman frequency. The spatial temperature profile reveals the ratio of the contact thermal resistance to the intrinsic thermal resistance of the nanotube. Moreover, the obtained temperature profiles allow differentiation between diffusive and ballistic phonon transport. Diffusive transport is observed in all nanotubes measured and the ratio of thermal contact resistance to intrinsic nanotube thermal resistance is found to range from 0.02 to 17.

Spatially resolved Raman spectra of individual pristine suspended carbon nanotubes are observed under electrical heating. The Raman G þ and G À bands show unequal temperature profiles. The preferential heating is more pronounced in short nanotubes (2 m) than in long nanotubes (5 m). These results are understood in terms of the decay and thermalization of nonequilibrium phonons, revealing the mechanism of thermal transport in these devices. The measurements also enable a direct estimate of thermal contact resistances and the spatial variation of thermal conductivity.

Raman spectra of individual pristine suspended single-walled carbon nanotubes are observed under high electrical bias. The LO and TO modes of the G band behave differently with respect to voltage bias, indicating preferential electron-phonon coupling and nonequilibrium phonon populations, which cause negative differential conductance in suspended devices. By correlating the electron resistivity to the optically measured phonon population, the data are fit using a Landauer model to determine the key scattering parameters.