Single Event Effect Analysis on DC and RF Operated AlGaN/GaN HEMTs

Rostewitz, M.; Hirche, K.; Latti, J.; Jutzi, E.

doi:10.1109/tns.2013.2247774

Cited by 42 publications

(25 citation statements)

References 3 publications

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“…[187][188][189][190][191][192][193] SEU do not necessarily cause permanent damage to the device, but may cause lasting problems to a system which cannot recover from such an error. In very sensitive devices, a single ion can cause a multiple-bit upset (MBU) in several adjacent memory cells.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

271

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

“…Rostewitz et al 188 evaluated the Single Event Burnout (SEB) and SEE of HEMTs under dc and rf operations during high energy Ar, Xe or Kr ion irradiation. They found that SEBs are correlated to enhanced Single Event Transients (SETs) close to the gate region and that no SEBs occurred under rf operation.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

271

130

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“…Some of these devices have been investigated for radiation effects [10], [11]; however, these were high electron mobility transistor (HEMT) devices tailored for radio frequency (RF) applications. Damage in GaN HEMTs from heavy ions has been seen in DC [12], [13] and RF [14] testing. The results of [13] and [14] are particularly surprising since the pinch-off and on-condition of the GaN HEMT are a more susceptible conditions for Single-Event Effects.…”

Section: P Ower Management Technologies Based On Galliummentioning

confidence: 99%

“…Damage in GaN HEMTs from heavy ions has been seen in DC [12], [13] and RF [14] testing. The results of [13] and [14] are particularly surprising since the pinch-off and on-condition of the GaN HEMT are a more susceptible conditions for Single-Event Effects. This has a critical implication for point-of-load (POL) and bootstrapped buck converters since these applications require n-channel devices that are on for a considerable portion of the duty cycle.…”

Section: P Ower Management Technologies Based On Galliummentioning

confidence: 99%

Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits

Scheick

2014

IEEE Trans. Nucl. Sci.

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“…These devices exhibit charge amplification [4] and suffer from Single Event Gate Rupture, SEGR [5][6][7] but no Single Event Burnout, SEB, was observed on them. A new kind of single event transient effect, called Single Event Switch, SES [8], was observed on 200 V normally on GaN power HEMT.…”

Section: Introductionmentioning

confidence: 99%