Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits

Scheick, Leif

doi:10.1109/tns.2014.2365545

Cited by 48 publications

(16 citation statements)

References 16 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These damages are very similar to the ones observed in [9] and are proved by the increase of the drain current leakage. The time evolution of this leakage is shown in Fig.…”

Section: Damages Induced By Heavy Ion Irradiationsupporting

confidence: 83%

“…The different colors refer to different irradiations performed with increasing V DS ranging from 20 V to 90 V with steps of 10 V. Almost no damage is observed in the gate structure whereas drain leakage current increases after each irradiation. This behavior was previously observed [9] and may compromise the reliability of the device even without the occurrence of single event failure.…”

Section: Damages Induced By Heavy Ion Irradiationsupporting

confidence: 52%

“…A first study about SEE induced by heavy ions in normally off GaN power HEMT has been recently presented and the occurrence of SEB was for the first time observed in these devices [9]. The experimental data revealed a wide damaged area on the device involving both gate and drain structures.…”

Section: Introductionmentioning

confidence: 96%

“…This characteristic, which allows us to get important information about the charge amplification mechanism, was not present in the experimental set-ups used in references [4,9].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Abbate

Busatto

Iannuzzo

et al. 2015

Microelectronics Reliability

View full text Add to dashboard Cite

“…These damages are very similar to the ones observed in [9] and are proved by the increase of the drain current leakage. The time evolution of this leakage is shown in Fig.…”

Section: Damages Induced By Heavy Ion Irradiationsupporting

confidence: 83%

Section: Damages Induced By Heavy Ion Irradiationsupporting

confidence: 52%

Section: Introductionmentioning

confidence: 96%

“…This characteristic, which allows us to get important information about the charge amplification mechanism, was not present in the experimental set-ups used in references [4,9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Abbate

Busatto

Iannuzzo

et al. 2015

Microelectronics Reliability

View full text Add to dashboard Cite

“…[187][188][189][190][191][192][193] SEU do not necessarily cause permanent damage to the device, but may cause lasting problems to a system which cannot recover from such an error. In very sensitive devices, a single ion can cause a multiple-bit upset (MBU) in several adjacent memory cells.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

271

130

View full text Add to dashboard Cite

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

show abstract

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

View full text Add to dashboard Cite

These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

show abstract

Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits

Cited by 48 publications

References 16 publications

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Contact Info

Product

Resources

About