Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Mizuta, Eiichi; Kuboyama, S.; Nakada, Y.; Takeyama, Akinori; Ohshima, Takeshi; Iwata, Y.; Suzuki, K.

doi:10.1109/tns.2018.2819990

Cited by 36 publications

(9 citation statements)

References 13 publications

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“…By the TCAD simulation, Zerarka et al [21] defined the worst case from the single event transient mechanism, and assumed that the traps effect can decrease the electric field after heavy ion irradiation, proposed two possible mechanisms of single event effects (SEEs). During the research of single-event damage on normally-off GaN-based power control applications, Mizuta et al [22] observed two types of catastrophic failure modes with different leakage current paths, one was caused by the leakage current path between the drain and Si substrate via the buffer layer, the other was the damage between the drain and source. Luo et al [23] supposed that the HEMT sensitive position of the traditional gate-field plate structure is near the drain side of the gate-field plate, because the high electric field near the gate-field plate can effectively accelerate the carriers to ionize more carriers and trigger SEB.…”

Section: Introductionmentioning

confidence: 99%

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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A new single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure. The comparative analysis demonstrates that the IL lifts the conduction band energy in buffer layer and a new quantum well is formed. The quantum well limits the electrons induced by heavy ion below the second channel into the first channel. Thus, better SEB performance is achieved compared with the conventional structure. Moreover, the breakdown characteristic of the new structure is significantly improved, while the output characteristic is slightly reduced. Under the condition that the two structures are irradiated vertically by heavy ion having the linear energy transfer (LET) value of 0.6 pC/µm, the SEB threshold voltage of the conventional structure is 280 V, while the hardened structure can achieve 375 V. INDEX TERMS GaN, high-electron mobility transistor (HEMT), single event burnout (SEB), barrier interlayer, SEB threshold voltage.

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Section: Introductionmentioning

confidence: 99%

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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“…Post failure analysis shows failure points at the drain-edge of the gate; and a failure mechanism is proposed [275]. Further testing of HD-GITs in [276] confirmed the angular dependence of SEE. Post failure analysis of these tests show failures in devices tested at perpendicular ion incidence which induced direct damage from the drain contact to the substrate.…”

Section: Single Event Effectsmentioning

confidence: 69%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Specifically, normally-off GaN power devices offer great advantages and potential for space and aerospace power applications. In previous studies [12][13][14][15], heavy ion data for GaN power devices showing SEB responses and brief exploration of the destruction have been reported. These studies have confirmed that when SEB occurs in a device, its electrical properties change, and single event transient (SET) current can be observed during an irradiation run.…”

Section: Introductionmentioning

confidence: 99%

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Cui

Shipeng

et al. 2022

Photonics

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Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper is dedicated to the investigation of the SEB mechanism in a GaN power device using a femtosecond pulsed laser. In the test, the SEB of a commercial p-GaN power device was triggered by a focused laser beam with a wavelength of 620 nm, and the irradiation-sensitive area of the devices was identified. We observed that the damage modes were consistent with the results of heavy ion experiments. The vertical breakdown of the drain is proposed as the dominant mechanism of SEB. We also provide a schematic representation of the leakage path formation using the electrical data obtained following laser-induced SEB. This study provides an important reference for consideration of device reliability and application prospects.

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Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Cited by 36 publications

References 13 publications

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

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