Single-electron tunneling in InP nanowires

Franceschi, Nicola De; Dam, Van Ja; Bakkers, Epam Erik; Feiner, LF Lou; Gurevich, Leonid; Kouwenhoven, L. P.

doi:10.1063/1.1590426

Cited by 146 publications

(144 citation statements)

References 17 publications

Supporting

Mentioning

140

Contrasting

Order By: Relevance

“…Crystallization is essential to create a nanowire, and is composed of droplet formation, nucleation, and growth, for which the vapor-liquid-solid growth method seems to be the most versatile. Fundamental electron transport investigations of grown nanowires with diameters in the range of 40-200 nm have been performed, showing Coulomb blockade resulting from single-charge tunneling through a single quantum structure with discrete energy levels ͑De Franceschi et al, 2003;Thelander et al, 2003;Bjork et al, 2004;Zhong et al, 2005͒. For …”

Section: Fabrication Techniquesmentioning

confidence: 99%

Transport phenomena in nanofluidics

2008

View full text Add to dashboard Cite

The transport of fluid in and around nanometer-sized objects with at least one characteristic dimension below 100 nm enables the occurrence of phenomena that are impossible at bigger length scales. This research field was only recently termed nanofluidics, but it has deep roots in science and technology. Nanofluidics has experienced considerable growth in recent years, as is confirmed by significant scientific and practical achievements. This review focuses on the physical properties and operational mechanisms of the most common structures, such as nanometer-sized openings and nanowires in solution on a chip. Since the surface-to-volume ratio increases with miniaturization, this ratio is high in nanochannels, resulting in surface-charge-governed transport, which allows ion separation and is described by a comprehensive electrokinetic theory. The charge selectivity is most pronounced if the Debye screening length is comparable to the smallest dimension of the nanochannel cross section, leading to a predominantly counterion containing nanometer-sized aperture. These unique properties contribute to the charge-based partitioning of biomolecules at the microchannel-nanochannel interface. Additionally, at this free-energy barrier, size-based partitioning can be achieved when biomolecules and nanoconstrictions have similar dimensions. Furthermore, nanopores and nanowires are rooted in interesting physical concepts, and since these structures demonstrate sensitive, label-free, and real-time electrical detection of biomolecules, the technologies hold great promise for the life sciences. The purpose of this review is to describe physical mechanisms on the nanometer scale where new phenomena occur, in order to exploit these unique properties and realize integrated sample preparation and analysis systems.

show abstract

Section: Fabrication Techniquesmentioning

confidence: 99%

Transport phenomena in nanofluidics

2008

View full text Add to dashboard Cite

show abstract

“…2 In addition, NW devices have shown excellent light detection properties. [3][4][5][6] Recently, quantum dots ͑QDs͒ embedded in NW devices have shown both single electron control [7][8][9][10] and single photon emission, 11 which are important in quantum information applications. The unique combination of an on-chip light emitter and detector is useful for near field optical circuits using plasmon waveguides.…”

mentioning

confidence: 99%

Single quantum dot nanowire photodetectors

Kouwen

Weert

Reimer

et al. 2010

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10] A very suitable and versatile technique for nanowire growth is the direct synthesis on a substrate. [11][12][13][14] The fabrication of III-V semiconductor nanowire based devices by such a bottom-up approach ensures the rational use of materials, as the nanowires can be obtained in principle on any substrate.…”

mentioning

confidence: 99%

Photocurrent and photoconductance properties of a GaAs nanowire

Thunich

Prechtel

Spirkoska

et al. 2009

Applied Physics Letters

101

View full text Add to dashboard Cite

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3193540͔Semiconductor nanowires have attracted considerable attention for the past few years because of their compelling electronic, mechanical, and optical properties. 1-10 A very suitable and versatile technique for nanowire growth is the direct synthesis on a substrate. [11][12][13][14] The fabrication of III-V semiconductor nanowire based devices by such a bottom-up approach ensures the rational use of materials, as the nanowires can be obtained in principle on any substrate. Here, we report on the optoelectronic properties of photodetectors based on single p-doped GaAs nanowires grown by molecular beam epitaxy ͑MBE͒ with the so-called vapor-liquid-solid method using Ga droplets as self-catalysts. [15][16][17] The nanowires are electrically contacted by metal electrodes using a focused ion beam ͑FIB͒ deposition technique. 18,19 We experimentally identify two dominating optoelectronic processes in the metal-GaAs nanowire-metal photodetectors. On the one hand, there is a photocurrent generated at the Schottky contacts between the GaAs nanowires and the metal sourcedrain electrodes, as recently shown for CdS nanowires. 8 On the other hand, we observe a photoconductance effect, when illuminating the GaAs nanowire far away from the contacts. We interpret the photoconductance effect to arise from band bending effects caused by surface states on the nanowire surface. In particular, optically generated excess electrons are trapped at the surface, where they act as a negative gating voltage on the p-doped nanowires ͑photogating effect͒. At the same time, the optically excited free excess holes raise the Fermi energy of the hole gas within the nanowires ͑photodoping effect͒. Both effects can raise the conductance of the semiconductor circuits. 20,21 We demonstrate that both photocurrent and photoconductance effects are sensitive to the orientation of linear polarized light. The photoconductance ͑-current͒ varies by ϳ35% ͑ϳ15%͒ for the photon polarization being parallel or perpendicular to the direction of the GaAs nanowires. Hereby, the metal-GaAs nanowiremetal circuits act as polarization-sensitive photodetectors, 2 which can be integrated into electronic circuits by the FIBdeposition technique in a very versatile way.Starting point are GaAs nanowires, which are grown by MBE on a SiO 2 covered ͑111͒-oriente...

show abstract

Single-electron tunneling in InP nanowires

Cited by 146 publications

References 17 publications

Transport phenomena in nanofluidics

Transport phenomena in nanofluidics

Single quantum dot nanowire photodetectors

Photocurrent and photoconductance properties of a GaAs nanowire

Contact Info

Product

Resources

About