Single crystalline silicon dioxide films on Mo(112)

Schroeder, Thomas; Hammoudeh, Ayman; Pykavy, Mikhail; Magg, Norbert; Adelt, Maik; Bäumer, Marcus; Freund, Hans‐Joachim

doi:10.1016/s0038-1101(01)00250-7

Cited by 42 publications

(32 citation statements)

References 23 publications

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“…2a, the topmost spectrum, corresponding to normal emission, consists of three features: one doublet at binding energy 99.2 eV for the 2p 3/2 doublet component and spin-orbit splitting energy of 0.6 eV that is related to the silicon substrate, and two lines located at 100.5 eV and 103.3 eV corresponding to silicon in Si 1+ and Si 4+ oxidation states, respectively. The position of Si 4+ 2p line is displaced in 0.2 eV towards higher binding energy with respect to Si 0 line as compared to the data published previously by Himpsel et al [11] and could be related to image charge interaction across silicon/silicon oxide interface as studied by Schrö der et al [12]. When increasing the detection angle of the emitted electrons (i.e.…”

Section: Resultssupporting

confidence: 70%

Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

et al. 2007

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Section: Resultssupporting

confidence: 70%

Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

et al. 2007

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“…11,12 In particular, the study confirmed the absence of silicon and molybdenum suboxides as well as molybdenum silicides in the system SiO 2 /Mo(112). A further important result for the construction of the structure models of the silica epilayer on the Mo͑112͒ surface in Sec.…”

Section: B Stoichiometry and Valence Bandssupporting

confidence: 53%

“…The first successful preparation of such a thin crystalline silica film grown on a Mo͑112͒ single crystal surface has been reported by our group. [10][11][12] In this way, surface science model catalyst studies of silica supported metal catalyst with structural control have become feasible and first results are available for the system Pd/SiO 2 /Mo(112). 13 As the oxide support is known to play an important role in the catalytic reaction, a multitechnique surface science study is presented in this paper to characterize in detail the properties of the heteroepitaxial system SiO 2 /Mo(112).…”

Section: Introductionmentioning

confidence: 99%

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

et al. 2002

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Ultrathin crystalline silica layers grown on a Mo͑112͒ substrate have been shown to be a useful silica model oxide support in surface science model catalyst studies. As the oxide support material plays an important role in the catalytic process, a multitechnique surface science study is presented to characterize the morphological and electronic properties of the heteroepitaxial system SiO 2 /Mo(112). The long-range order of the silica epilayer which grows commensurate with a c(2ϫ2) surface unit mesh on the Mo͑112͒ substrate is studied by low-energy electron diffraction ͑LEED͒. The defect structure of the silica epilayer is characterized in a spot profile analysis ͑SPA͒-LEED study. Antiphase domain boundaries split the silica epilayer into an array of silica crystal grains whose average size and shape is determined. Aiming to prepare flat silica surfaces, the change in the surface roughness with progress in the film preparation is monitored in a combined SPA-LEED and scanning tunneling microscopy ͑STM͒ study and seen to influence also the Si-O stretching frequency in the infrared-reflection-absorption spectroscopy spectra. In STM images of the final silica film an average surface roughness of about 1 Å is detected. It is possible to visualize the silica film unit cell periodicity. A combined anger electron spectroscopy and ultraviolet photoelectron spectroscopy valence band study confirms the silica film stoichiometry and the growth of a 4:2 coordinated silica polymorph on the Mo͑112͒ surface. These various surface science studies allow us to propose models for the growth and structure of the silica epilayer on the Mo͑112͒ surface.

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“…Although the first attempts to synthesize crystalline silica films can be traced back to the early 90's [13,14], the preparation of well-ordered thin silica films was reported only recently by Schroeder et al [15][16][17][18] using a Mo(112) substrate, who basically modified a recipe originally applied to the Mo(100) and Mo(110) substrates by Goodman and coworkers [13,14]. The film exhibited a c(2x2) diffraction pattern with respect to Mo(112), and showed at least two oxygen species in X-ray photoelectron spectra (XPS) and a strong phonon absorption band centered at 1048 cm -1 observed by infrared reflection absorption spectroscopy (IRAS).…”

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confidence: 99%

On the geometrical and electronic structure of an ultra-thin crystalline silica film grown on Mo(112)

et al. 2007

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Abstract. The atomic structure of a well-ordered silica film grown on a Mo(112) single crystal substrate is discussed in detail using the experimental and theoretical results available to date. New photoelectron spectroscopy results using synchrotron radiation and ultraviolet spectroscopy data are presented. The analysis unambiguously shows that the ultra-thin silica film consists of a two-dimensional network of corner sharing [SiO 4 ] tetrahedra chemisorbed on the unreconstructed Mo(112) surface. The review also highlights the important role of theoretical calculations in the determination of the atomic structure of the silica films and in interpretation of experimental data.

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Single crystalline silicon dioxide films on Mo(112)

Cited by 42 publications

References 23 publications

Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

Morphological and electronic properties of ultrathin crystalline silica epilayers on a Mo(112) substrate

On the geometrical and electronic structure of an ultra-thin crystalline silica film grown on Mo(112)

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