Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4

Shannon, R. D.; Gillson, J.L.; Bouchard, R. J.

doi:10.1016/0022-3697(77)90126-3

Cited by 157 publications

(87 citation statements)

References 31 publications

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“…In recent years, cadmium stannate (CdSnO 3 ), used as electrochemical material [13,14], has shown quite attractive gas sensitivity properties to various gases such as C 2 H 5 OH gas [15][16][17][18], butane [19], ammonia [20], CEES [21] and chlorine [2]. At present, CdSnO 3 is synthesized mainly by chemical coprecipitation [2,[16][17][18]22].…”

Section: Introductionmentioning

confidence: 99%

Room-temperature chlorine gas sensor based on CdSnO3 synthesized by hydrothermal process

Zhao

Lou

et al. 2013

J Adv Ceram

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Abstract:The perovskite-structure CdSnO 3 was obtained by calcinating CdSnO 3 ·3H 2 O precursor at 550 ℃, which was synthesized by hydrothermal process at 170 ℃ for 16 h. The phase and microstructure of the obtained CdSnO 3 powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The CdSnO 3 powders exhibit uniformly cubic structure with side length of about 100 nm. The effects of working temperature and concentration of detected gas on the gas response were studied. The selectivity of chlorine gas against other gases and response-recovery time of the sensor were also investigated. The results reveal that the CdSnO 3 gas sensor has enhanced sensing properties to 1-10 ppm chlorine gas at room temperature; the value of gas response can reach 1338.9 to 5 ppm chlorine gas. Moreover, the sensor shows good selectivity and quick response behavior (23 s) to chlorine gas, indicating its application in detecting chlorine gas at room temperature in the future.

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Section: Introductionmentioning

confidence: 99%

Room-temperature chlorine gas sensor based on CdSnO3 synthesized by hydrothermal process

Zhao

Lou

et al. 2013

J Adv Ceram

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“…[1] Following the discovery of SnO 2 with a similar unique combination of properties, [2] several patents were filed in the 1940s to employ TCOs as antistatic coatings and transparent heaters-long before the discovery of the now well-known Sn-doped In 2 O 3 (ITO) and Al-doped ZnO, [3] widely employed as flat panel display electrodes in the past decades. Despite great technological demand for TCOs [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and extensive experimental efforts to improve the conductivity via impurity doping, [21,22] to tune the work function and carrier concentration via cation composition, [23][24][25][26][27][28] to achieve two-dimensional transport via heterointerfaces, [29] and to p-dope the oxides toward active layers of transparent electronics, [30][31][32] theoretical understanding of these fascinating materials has lagged behind significantly. The first electronic band structure of ITO was calculated in 2001; [33] the role of native defects in prototype TCOs was understood after 2002; [34][35][36][37] the properties of multi-cation TCOs were first considered in 2004 [37][38][39][40][41]…”

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confidence: 99%

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Medvedeva

Buchholz

Chang

2017

Adv Elect Materials

137

144

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conductivity. [1] Following the discovery of SnO 2 with a similar unique combination of properties, [2] several patents were filed in the 1940s to employ TCOs as antistatic coatings and transparent heaters-long before the discovery of the now well-known Sn-doped In 2 O 3 (ITO) and Al-doped ZnO, [3] widely employed as flat panel display electrodes in the past decades. Despite great technological demand for TCOs [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and extensive experimental efforts to improve the conductivity via impurity doping, [21,22] to tune the work function and carrier concentration via cation composition, [23][24][25][26][27][28] to achieve two-dimensional transport via heterointerfaces, [29] and to p-dope the oxides toward active layers of transparent electronics, [30][31][32] theoretical understanding of these fascinating materials has lagged behind significantly. The first electronic band structure of ITO was calculated in 2001; [33] the role of native defects in prototype TCOs was understood after 2002; [34][35][36][37] the properties of multi-cation TCOs were first considered in 2004 [37][38][39][40][41][42] followed by modeling of novel TCO hosts [43,44] and spin-dependent transport in transition-metal-doped TCOs; [45] the nature of the band gap in In 2 O 3 was clarified in 2008; [46] and a first highthroughput search for p-type TCOs was performed in 2013. [47] Complex oxides that consist of multiple post-transition metals, such as InGaZnO 4 , have recently become competitive with silicon as the active transistor layer to drive arrays of pixels in large area displays. [9,[13][14][15][16][17][18][19]24] As the billion-dollar display industry moves forward, the amorphous phase of the complex oxides is favored both for flexible and high-resolution display applications. [13][14][15][16][48][49][50][51][52][53][54][55][56][57][58][59] The unique properties of AOSs were first demonstrated in 1990, [60] and the research area has been growing exponentially since then. Unlike Si-based semiconductors, AOSs were shown to exhibit optical, electrical, thermal, and mechanical properties that are comparable or even superior to those possessed by their crystalline counterparts. [48][49][50][51][52][53][54][55][56][57][58] Table 1 summarizes the key physical properties of best-performing crystalline TCOs and AOSs; the differences (or the lack thereof) between the two will be discussed in detail in the respective sections below.

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“…[1][2][3][4][5][6][7]. Multicomponent TCOs -complex oxides which contain a combination of post-transition metals, In, Zn, Ga, Cd or Sn, as well as light main-group metals such as Al or Mg -have attracted wide attention due to a possibility to manipulate the optical, electronic, and thermal properties via the chemical composition and, thus, to significantly broaden the application range of TCO materials [1,3,[6][7][8][9][10][11][12][13][14][15]. To optimize the properties of a multicomponent TCOs, it is critical to understand the role played by each constituent oxide.…”

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confidence: 99%

Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach

Murat

Medvedeva

2012

Phys. Rev. B

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The structural, electronic, and optical properties of twelve multicomponent oxides with layered structure, RAMO4, where R 3+ =In or Sc; A 3+ =Al or Ga; and M 2+ =Ca, Cd, Mg, or Zn, are investigated using first-principles density functional approach. The compositional complexity of RAMO4 leads to a wide range of band gap values varying from 2.45 eV for InGaCdO4 to 6.29 eV for ScAlMgO4 as obtained from our self-consistent screened-exchange local density approximation calculations. Strikingly, despite the different band gaps in the oxide constituents, namely, 2-4 eV in CdO, In2O3, or ZnO; 5-6 eV for Ga2O3 or Sc2O3; and 7-9 eV in CaO, MgO, or Al2O3, the bottom of the conduction band in the multicomponent oxides is formed from the s-states of all cations and their neighboring oxygen p-states. We show that the hybrid nature of the conduction band in multicomponent oxides originates from the unusual five-fold atomic coordination of A 3+ and M 2+ cations which enables the interaction between the spatially-spread s-orbitals of adjacent cations via shared oxygen atoms. The effect of the local atomic coordination on the band gap, the electron effective mass, the orbital composition of the conduction band, and the expected (an)isotropic character of the electron transport in layered RAMO4 is thoroughly discussed.

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Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4

Cited by 157 publications

References 31 publications

Room-temperature chlorine gas sensor based on CdSnO3 synthesized by hydrothermal process

Room-temperature chlorine gas sensor based on CdSnO3 synthesized by hydrothermal process

Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors

Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach

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