Single crystal Gd₂O₃epitaxially on GaAs(111)A

Abstract

Gd 2 O 3 films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situ reflective high energy electron diffraction and high-resolution X-ray diffraction using synchrotron radiation. The films undergo a structure phase transformation from hexagonal to monoclinic when the film thickness increases from 2 to 6 nm; the 2 nm oxide has H-Gd 2 O 3 (0001)[101 ¯0]‖GaAs(111)[42 ¯2 ¯] orientation relationship and the 6 nm film follows M-Gd 2 O 3 (2 ¯01)[102]‖GaAs(111)<42 ¯2 ¯> with 3 rotational variants anchored by the 3-fold symmetric substrate. Here, H and M denote the hexagonal and monoclinic phases, respectively.

Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability

“…The monoclinic and hexagonal structure of Gd 2 O 3 is only stable at high pressures and temperatures [11,12]. However, the monoclinic structure could be stabilized in thin films on several substrates, such as Si(001), Si(111), GaN, GaAs and SiC [13][14][15][16][17].…”

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

“…Thin films of Gd 2 O 3 were found to show a thicknessdependent change of the crystal phase from hexagonal to monoclinic structure during epitaxial growth on GaN, SiC and GaAs (Chang et al, 2013;Fissel et al, 2006a;Chiang et al, 2014). The epitaxial growth of Gd 2 O 3 on Si(111) at a low temperature results in a non-cubic structure (Moellers et al, 2017).…”

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

“…6,7 In particular, In 0.53 Ga 0.47 As is an ideal III-V compound semiconductor for a metal-oxidesemiconductor field-effect transistor (MOSFET) channel material due to its high electronic mobility and high breakdown field. 8 However, the performance of the device is mainly influenced by the crystalline quality of In 0.53 Ga 0.47 As. Therefore, improving the crystalline quality is a key issue for high-performance III-V MOSFETs.…”