Single bump, two-color quantum dot camera

Varley, E.; Lenz, M.; Lee, S. J.; Brown, Jay S.; Ramírez, David; Stintz, A.; Krishna, S.; Reisinger, A. R.; Sundaram, M.

doi:10.1063/1.2775087

Cited by 43 publications

(28 citation statements)

References 11 publications

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“…In addition to these features, our device shares, in principle, the intrinsic advantages of photo-detection using semiconductor QDs: control of peak response wavelength, the possibility of multiband detection 19 , and the use of a mature and available technology. Figure 1 shows the simplified device structure of the OTIP, its band diagram and an equivalent circuit.…”

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confidence: 99%

Optically Triggered Infrared Photodetector

et al. 2014

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We demonstrate a new class of semiconductor device: the Optically Triggered Infrared Photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590-nm light-emitting diode. Furthermore, the detection gain is achieved in our device without

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confidence: 99%

Optically Triggered Infrared Photodetector

et al. 2014

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“…Recently, Varley et al [46] have demonstrated a twocolour, MWIR/LWIR, 320´256 FPA based on DWELL detectors. Minimum NEDT values of 55 mK (MWIR) and 70 mK (LWIR) were measured (see Fig.…”

Section: New Materials Systems For Third Generation Infrared Photodetementioning

confidence: 99%

“…Recently, type II InAs/GaInSb superlattices [20,21,[39][40][41] and QDIPs [42][43][44][45][46][47] have emerged as next two candidates for third generation infrared detectors. Table 2 compares the essential properties of type-II material system with well established competitors -HgCdTe photodiodes and QWIPs.…”

Section: New Materials Systemsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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“…7 These detectors allow a more advanced approach for sequential dual color detection, involving two different intersubband transitions, which dominate the response at different applied biases; a bound-to-bound transition between a quantum dot ͑QD͒ state and a QW subband and bound-tocontinuum transitions with final states in the surrounding matrix ͑corresponding to the LWIR and the MWIR response, respectively͒. 8 In this article, two different approaches to improve the tunability of DWELL structures will be presented. In the first approach, an asymmetrically positioned InAs QD layer in a QW enables a bias tunable energy separation between the QD energy level and QW energy band, resulting in tunability of the detection wavelength within the LWIR wavelength band.…”

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confidence: 99%

Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

Höglund

Holtz

Pettersson

et al. 2008

Applied Physics Letters

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Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 µm was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 µm with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.Original Publication:Linda Höglund, Per-Olof Holtz, H. Pettersson, C. Asplund, Q. Wang, H. Malm, S. Almqvist, E. Petrini and J. Y. Andersson, Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors, 2008, Applied Physics Letters, (93), 203512.http://dx.doi.org/10.1063/1.3033169Copyright: American Institute of Physicshttp://www.aip.org

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Single bump, two-color quantum dot camera

Cited by 43 publications

References 11 publications

Optically Triggered Infrared Photodetector

Optically Triggered Infrared Photodetector

New material systems for third generation infrared photodetectors

Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

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