Single active-layer structured dual-function devices using hybrid polymer–quantum dots

Son, Dong-Ick; Park, Donghee; Ie, Sangyub; Choi, Won Jae; Choi, Ji‐Won; Li, Fushan; Kim, Tae-Whan

doi:10.1088/0957-4484/19/39/395201

Cited by 17 publications

(9 citation statements)

References 30 publications

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“…The energy band diagram of the inverted QDLEDs consisting of ITO/ZnO NPs/PEIE/CdSe-ZnO QDs/poly- TPD:PVK/MoO 3 /Ag were illustrated as shown in Fig. 2c (note: except for ZnO NPs/PEIE, other energy level values are taken from literatures 22 23 ).…”

Section: Resultsmentioning

confidence: 99%

Inverted Quantum Dot Light Emitting Diodes using Polyethylenimine ethoxylated modified ZnO

Kim

Park

et al. 2015

Sci Rep

121

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Colloidal quantum dots (QDs) are an emerging class of new materials due to their unique physical properties. In particular, colloidal QD based light emitting diodes (QDLEDs) have been extensively studied and developed for the next generation displays and solid-state lighting. Among a number of approaches to improve performance of the QDLEDs, the most practical one is optimization of charge transport and charge balance in the recombination region. Here, we suggest a polyethylenimine ethoxylated (PEIE) modified ZnO nanoparticles (NPs) as electron injection and transport layer for inverted structure red CdSe-ZnS based QDLED. The PEIE surface modifier, incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electron injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58 eV to 2.87 eV and charge balance on the QD emitter. As a result, this device exhibits a low turn-on voltage of 2.0–2.5 V and has maximum luminance and current efficiency values of 8600 cd/m2 and current efficiency of 1.53 cd/A, respectively. The same scheme with ZnO NPs/PEIE layer has also been used to successfully fabricate green, blue, and white QDLEDs.

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Section: Resultsmentioning

confidence: 99%

Inverted Quantum Dot Light Emitting Diodes using Polyethylenimine ethoxylated modified ZnO

Kim

Park

et al. 2015

Sci Rep

121

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“…A hybrid CdSe/ZnS QD−polymer-based memory device fabricated with a simple spin-coating technique was demonstrated by Kim et al 282 The active layer was composed of PVK and 1,3,5-tris-(N-phenylbenzimidazol-2-yl) benzene (TPBi), in which the CdSe/ZnS QDs were uniformly embedded. The conductance of the Al/[CdSe/ZnS QDs/PVK]/ITO/glass structured memory device can be switched by a reverse bias voltage.…”

Section: Rram Devicementioning

confidence: 99%

“…For core–shell QDs of CdSe/ZnS, CuInS 2 -ZnS was applied in various polymer matrices to investigate the electric performance. ,,, In the core–shell system, holes could enter the valence band of the core through a shell with a direct tunneling effect and form an internal electric field, and the C–V curve was shifted. During the erasing process with the negative voltage bias, the internal electric field was eliminated, and releasing holes from the core–shell QDs would shift the C–V curves to the right direction.…”

Section: Building Memristor Devices With Qdsmentioning

confidence: 99%

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

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The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

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“…Metals and indium tin oxide are widely used as electrode materials for hybrid memory devices. 5,[97][98][99] However, their brittle properties under bending may become obstacles for application in flexible devices. For this reason, Ji et al 100 developed a flexible hybrid resistive memory device with transparent multilayer graphene electrodes on a polyethylene terephthlate substrate (Figure 11).…”

Section: Electrical Memory Devices Tw Kim Et Almentioning

confidence: 99%

Electrical memory devices based on inorganic/organic nanocomposites

Kim

Yang²,

et al. 2012

NPG Asia Mater

Self Cite

168

110

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Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices. Among the various types of nonvolatile memory devices, organic bistable devices fabricated utilizing hybrid organic/inorganic nanocomposites have currently been receiving broad attention because of their excellent performance with high-mechanical flexibility, simple fabrication and low cost. The prospect of potential applications of nonvolatile memory devices fabricated utilizing hybrid nanocomposites has led to substantial research and development efforts to form various kinds of nanocomposites by using various methods. Generally, hybrid inorganic/organic nanocomposites are composed of organic layers containing metal nanoparticles, semiconductor quantum dots (QDs), core-shell semiconductor QDs, fullerenes, carbon nanotubes, graphene molecules or graphene oxides (GOs). This review article describes investigations of and developments in nonvolatile memory devices based on hybrid inorganic/organic nanocomposites over the past 5 years. The device structure, fabrication and electrical characteristics of nonvolatile memory devices are discussed, and the switching and carrier transport mechanisms in the hybrid nonvolatile memory devices are reviewed. Furthermore, various flexible memory devices fabricated utilizing hybrid nanocomposites are described and their future prospects are discussed.

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Single active-layer structured dual-function devices using hybrid polymer–quantum dots

Cited by 17 publications

References 30 publications

Inverted Quantum Dot Light Emitting Diodes using Polyethylenimine ethoxylated modified ZnO

Inverted Quantum Dot Light Emitting Diodes using Polyethylenimine ethoxylated modified ZnO

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Electrical memory devices based on inorganic/organic nanocomposites

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