Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses

“…As plotted in Figure 2c, the double-sweep characteristic I-V curves of SiW 12 @Zn-bcbp demonstrates a typical bipolar RS behavior with averaged ON/OFF ratio of 11.5 (ON/OFF currents: 8.06 × 10 −10 /7.00 × 10 −11 A) and set/reset voltages of 9.95/-11.51 V, which is comparable with some perovskitebased or POM-based hybrid memory devices (Table S4, Supporting Information). [26,[47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64] The switching processes can be repeatable in the next cycles, and its stability can be verified by the 50 sweep cycles (Figure S7, Supporting Information). Besides, the conduction mechanisms of LRS and HRS in SiW 12 @Znbcbp can be described by Ohmic's law and space-charge-limited conduction (SCLC) models.…”

Two resistance-switchable hybrid polyoxotantalates based on {Co2Ta12} clusters

“…To investigate the electrical bistability mechanism, several carrier transport models including the Ohm's law, the spacecharge limited conduction (SCLC) model and trap-filled SCLC model (TFLC) have been used to fit the I-V data in the positive and negative bias voltage sweep regions. [48][49][50] The fitting results show that in the positive sweep region (Fig. 5d and 6d), the current-voltage curves are relatively constant within this voltage range, and follow the Ohm's law in the range of 0.05-0.93 V for 1 and 0.11-1.55 V for 2, with slopes of 1.18/1.20, respectively, suggesting that the carriers generated by the external voltage excitation are injected into the POTas, and the traps are partially filled.…”

The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors

“…[30][31][32][33][34] Their photo/electrical performances could be modulated by modifications on organic ligands and metal centers, giving rise to binary or multi-level conductive states. [35,36] The study about POMs-based organic-inorganic hybrids as memory devices is still in its infancy. The POM clusters could act as nodes in metal-organic frameworks (so called POMOFs).…”