Abstract:The coming big‐date era has created a huge demand for next‐generation memory technologies with characters of higher data‐storage densities, faster access speeds, lower power consumption and better environmental compatibility. In this field, the design of resistive switching active materials is pivotal but challengeable. Polyoxometalates (POMs) are promising candidates for next‐generation molecular memristors due to their versatile redox characters, excellent electron reservoirs and good compatibility/convenien… Show more
Polyoxometalate (POM)-based materials are ideal candidates for implementing molecular memories, and the rational POM molecule design is key for higher resistive switching (RS) performance. In this work, in order to...
Polyoxometalate (POM)-based materials are ideal candidates for implementing molecular memories, and the rational POM molecule design is key for higher resistive switching (RS) performance. In this work, in order to...
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